JANSD2N3057A-Transistor NPN Power Transistor in TO-3 Package ?C High Current Switch

  • This transistor amplifies electrical signals, enabling efficient switching and control in circuits.
  • Its voltage rating ensures stable operation under demanding electrical conditions, enhancing performance.
  • The compact package design supports board-space savings and simplifies integration into dense layouts.
  • Ideal for use in power regulation circuits, it improves device efficiency and thermal management.
  • Manufactured to meet industry standards, it provides consistent reliability throughout its service life.
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JANSD2N3057A-Transistor Overview

The JANSD2N3057A-Transistor is a high-power NPN bipolar junction transistor designed for robust switching and amplification tasks in industrial and commercial electronics. Featuring a collector-emitter voltage rating suitable for demanding applications, this transistor supports moderate to high current loads while maintaining reliable performance under varied thermal conditions. Its TO-220 package ensures efficient heat dissipation and facilitates easy integration into power control circuits. Engineers and sourcing specialists will find this device well-suited for power regulation, motor control, and audio amplifier stages. For additional technical information and sourcing, visit Fabricant de circuits intégrés.

JANSD2N3057A-Transistor Technical Specifications

Paramètres Spécifications
Type de transistor NPN Bipolar Junction Transistor
Tension collecteur-émetteur (VPDG) 60 V
Courant de collecteur (IC) 15 A
Dissipation de puissance (Ptot) 115 W
Gain Produit de largeur de bande (fT) 3 MHz (typical)
Gain en courant continu (hFE) 20 to 70 (depending on IC)
Fréquence de transition 3 MHz
Paquet TO-220
Température de jonction opérationnelle (TJ) -65??C to +200??C

JANSD2N3057A-Transistor Key Features

  • High current handling capability: Supports collector currents up to 15 A, enabling its use in power-intensive applications without frequent thermal failures.
  • Robust voltage rating: Collector-emitter voltage of 60 V ensures safe operation in medium-voltage power switching circuits.
  • Gestion thermique efficace : TO-220 package facilitates effective heat dissipation, enhancing reliability and longevity in high-power environments.
  • Large gamme de températures de fonctionnement : Functionality from -65??C up to +200??C supports deployment in harsh industrial conditions.

Applications typiques

  • Power amplifiers in audio and industrial signal processing, benefiting from high gain and power handling.
  • Switching regulators and power supply circuits requiring robust current and voltage ratings.
  • Motor control and driver stages where high current capacity and reliable switching are critical.
  • General-purpose medium-power switching applications in industrial automation and control systems.

JANSD2N3057A-Transistor Advantages vs Typical Alternatives

This transistor excels in applications requiring elevated current and voltage ratings while maintaining thermal stability. Compared to typical small-signal transistors, it offers superior power dissipation and ruggedness, making it more reliable in industrial power control scenarios. Its moderate gain range enables precise amplification without sacrificing switching speed, supporting efficient circuit designs with enhanced durability and performance.

JANSD2N3057A-Transistor Brand Info

The JANSD2N3057A is a military-grade or industrial-grade variant of the popular 2N3057 transistor series, commonly manufactured by established semiconductor producers specializing in power transistors. Known for its rugged construction and dependable performance, the device is often sourced from suppliers who adhere to stringent quality standards catering to aerospace, defense, and industrial markets. This transistor is recognized for its dependable operation under harsh environmental and electrical stress conditions.

FAQ

What type of transistor is the JANSD2N3057A and what does it imply for circuit design?

The JANSD2N3057A is an NPN bipolar junction transistor (BJT). This means it controls current flow by using both electron and hole charge carriers, making it suitable for amplification and switching in medium to high power applications. Its NPN configuration typically requires a positive voltage at the base relative to the emitter to turn on.

Quelles sont les valeurs maximales de tension et de courant pour ce transistor ?

The transistor supports a maximum collector-emitter voltage of 60 volts and can handle collector currents up to 15 amperes. These ratings make it suitable for circuits that operate at moderate voltages with significant current demands, such as power amplifiers and motor drivers.

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