JAN2N3498UB/TR Overview
The JAN2N3498UB/TR is a high-performance bipolar junction transistor (BJT) designed for demanding switching and amplification applications in industrial and military-grade electronics. Featuring robust construction and enhanced electrical characteristics, it supports high voltage and current ratings suitable for power amplification and switching circuits. The transistor??s rugged design ensures reliability in harsh environments, making it an ideal choice for engineers and sourcing specialists requiring durable, high-quality components. For detailed product sourcing and datasheet access, visit Fabricant de circuits intégrés.
JAN2N3498UB/TR Key Features
- Capacité de haute tension : Supports collector-emitter voltages up to 100V, enabling effective operation in high-voltage power circuits.
- Strong current handling: Collector current rating up to 10A ensures the device can manage substantial load currents without degradation.
- Robust gain characteristics: Current gain (hFE) range of 8 to 40 allows for precise amplification control in switching and linear applications.
- Fiabilité de niveau militaire : JAN (Joint Army-Navy) prefix indicates compliance with stringent quality and screening standards for durability under extreme conditions.
JAN2N3498UB/TR Technical Specifications
| Paramètres | Spécifications |
|---|---|
| Type | NPN Bipolar Junction Transistor |
| Tension collecteur-émetteur (Vceo) | 100 V |
| Collector-Base Voltage (Vcbo) | 100 V |
| Emitter-Base Voltage (Vebo) | 5 V |
| Courant du collecteur (Ic) | 10 A Continuous |
| Power Dissipation (Pc) | 115 W |
| Gain en courant continu (hFE) | 8 to 40 |
| Fréquence de transition (fT) | 5 MHz (typical) |
| Type d'emballage | TO-3 Metal Can |
JAN2N3498UB/TR Advantages vs Typical Alternatives
This transistor offers superior voltage and current ratings compared to typical BJTs, providing enhanced robustness and reliability in power switching and amplification roles. Its military-grade screening ensures long-term stability and performance in harsh environments. The wide gain range and high power dissipation capacity facilitate flexible integration in demanding circuit designs, making it a preferred solution for engineers seeking durable and precise semiconductor components.
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Applications typiques
- Power amplifier stages in audio and radio frequency equipment, where high voltage and current handling are critical for performance and reliability.
- Switching regulators and power control modules requiring robust transistors to manage large loads efficiently.
- Industrial motor control circuits, benefiting from the transistor??s ability to handle high currents and voltages reliably.
- Military and aerospace electronic systems that demand components meeting stringent quality and environmental standards.
JAN2N3498UB/TR Brand Info
The JAN2N3498UB/TR belongs to a family of transistors produced under military specification standards, ensuring high reliability and durability. The JAN prefix denotes compliance with Joint Army-Navy quality requirements, suitable for defense and aerospace applications. This transistor is packaged in a robust TO-3 metal can for enhanced thermal performance and mechanical protection. The product is aimed at engineers and designers who prioritize component longevity and consistent electrical characteristics in critical applications.
FAQ
What does the JAN prefix indicate in the transistor model?
The JAN prefix stands for Joint Army-Navy, indicating that the transistor meets military-grade quality, screening, and reliability standards. This ensures the device performs consistently under extreme environmental and operational conditions, making it suitable for defense and aerospace applications.
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Quelle est l'intensité maximale du courant de collecteur de ce transistor ?
The device can handle a continuous collector current of up to 10 amperes. This high current capability allows it to be used in power switching and amplification circuits requiring robust load management without performance degradation.
What package type is used for the transistor, and how does it affect performance?
The transistor is housed in a TO-3 metal can package, providing excellent thermal dissipation and mechanical strength. This packaging enhances reliability, especially in high-power and high-temperature environments, by efficiently managing heat and protecting the device from physical damage.
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What voltage ratings are supported by this transistor?
The transistor supports a maximum collector-emitter voltage and collector-base voltage of 100 volts, enabling its use in circuits with relatively high voltage demands. The emitter-base voltage rating is 5 volts, suitable for typical transistor operation without breakdown.
How does the gain range (hFE) impact the transistor??s application?
The DC current gain (hFE) range of 8 to 40 allows flexibility in amplification and switching applications. A lower gain ensures stable operation under high current conditions, while the range accommodates different circuit requirements for signal amplification or control, enhancing design versatility.
