IRLMS1503TRPBF N-Channel MOSFET 30V 4.2A SOT-23 Surface Mount Transistor

IRLMS1503TRPBF Overview

The IRLMS1503TRPBF is an advanced N-channel MOSFET designed for high-efficiency switching and low-voltage operation in compact, surface-mount packages. With a low R_DS(on) and logic-level gate drive, this device is well-suited for demanding power management and load switching applications in industrial, automotive, and consumer electronics. It offers enhanced performance for space-constrained designs where heat dissipation and switching speed are critical. For sourcing or further details, refer to Fabricant de circuits intégrés.

IRLMS1503TRPBF Technical Specifications

Paramètres	Valeur
Type de transistor	N-Channel MOSFET
Drain-Source Voltage (VDS)	30 V
Continuous Drain Current (ID)	4.3 A
On-Resistance (RDS(on))	0.045 ?? @ 4.5 Vgs
Gate Threshold Voltage (VGS(th))	1 V (typical)
Dissipation de puissance	1.25 W
Package / Case	SOT-23
Plage de température de fonctionnement	De -55°C à +150°C
Type de montage	Montage en surface

IRLMS1503TRPBF Key Features

• Logic-level gate drive enables direct interfacing with low-voltage microcontrollers and logic circuits, simplifying design and reducing component count.
• Low on-resistance (R_DS(on)) minimizes conduction losses, increasing overall energy efficiency in switching applications.
• Compact SOT-23 surface-mount package supports high-density PCB layouts, helping reduce board size for modern, space-constrained designs.
• Wide operating temperature range ensures device reliability and consistent performance in harsh or variable industrial environments.

IRLMS1503TRPBF Advantages vs Typical Alternatives

This MOSFET stands out due to its low gate threshold voltage and low on-resistance, which together enable efficient performance at low drive voltages. Its compact SOT-23 package and robust thermal characteristics offer integration advantages and reliability in challenging environments. These function words highlight why it is preferred for modern, high-density electronics.

Applications typiques

• Load switching in portable devices: Its logic-level gate drive and low R_DS(on) make it ideal for controlling power rails or subsystems in battery-powered equipment, optimizing energy usage and extending battery life.
• DC-DC converter circuits: Suitable for synchronous rectification and switching elements, where fast switching speed and low losses are required to achieve high power conversion efficiency.
• Relay replacement in automotive modules: Used as a solid-state switch to increase reliability and reduce mechanical wear compared to traditional relays in automotive electronic control units.
• Level shifting and signal switching: Enables efficient interfacing between different logic levels or as a switch in industrial automation systems, where reliability and compactness are essential.

IRLMS1503TRPBF Brand Info

The IRLMS1503TRPBF is manufactured by a leading provider of power semiconductors, offering a blend of advanced MOSFET technology and high-volume reliability. This device exemplifies the brand??s commitment to delivering compact, efficient, and robust power management solutions for a wide range of industrial and electronics applications. With a proven track record and global supply chain, the IRLMS1503TRPBF is trusted by engineers and sourcing professionals seeking dependable, high-performance MOSFET components.

FAQ

What is the maximum drain-source voltage supported by this MOSFET?

The device can handle a maximum drain-source voltage of 30 V, making it suitable for a wide range of low to medium voltage switching and load control applications across industrial and consumer electronics.

Can this MOSFET be driven directly from logic-level outputs?

Yes, it is designed with a logic-level gate threshold voltage, allowing direct control from standard 3.3 V or 5 V logic circuits without the need for additional gate drive circuitry.

What type of applications benefit most from the SOT-23 package?

The compact SOT-23 package is ideal for applications where PCB space is at a premium, such as portable electronics, high-density embedded systems, and modular industrial control units.

How does the low R_DS(on) value improve efficiency?

A low on-resistance reduces the voltage drop across the MOSFET during conduction, minimizing power loss and heat generation, which in turn enhances the energy efficiency and reliability of switching circuits.

What is the recommended operating temperature range for this device?

This MOSFET operates reliably within a temperature range from -55??C to +150??C, ensuring stable performance in both standard and harsh industrial environments.