IPB600N25N3GATMA1 Power MOSFET 252V 600A TO-263 Package High-Performance Transistor

IPB600N25N3GATMA1 Overview

The IPB600N25N3GATMA1 is a high-performance power MOSFET designed for demanding industrial and automotive applications. Offering robust voltage and current ratings, this device stands out for its efficient power switching and low on-resistance, making it ideal for energy-sensitive systems. Its advanced trench technology ensures reliable operation even in challenging environments. Sourcing specialists and engineers seeking a durable, efficient, and cost-effective solution for high-current switching will find this component an excellent fit. For more details, visit Fabricant de circuits intégrés.

IPB600N25N3GATMA1 Technical Specifications

Paramètres	Valeur
Type	N-Channel Power MOSFET
Drain-Source Voltage (VDS)	250 V
Continuous Drain Current (ID)	600 A
RDS(on) (Max)	2.3 m??
Gate Charge (Qg)	Typical value available in datasheet
Paquet	TO-263
Technology	Trench MOSFET
Plage de température de fonctionnement	De -55°C à +150°C
Polarity	N-Channel

IPB600N25N3GATMA1 Key Features

• High current capability of up to 600 A ensures suitability for high-power loads, reducing the need for parallel devices and simplifying system design.
• Very low R_DS(on) of 2.3 m?? minimizes conduction losses, improving energy efficiency and thermal management in power circuits.
• Trench MOSFET technology delivers robust switching performance and reliability, making it ideal for critical industrial and automotive environments.
• Wide operating temperature range (-55??C to +150??C) supports use in harsh or temperature-variable installations.
• Industry-standard TO-263 package enables easy integration into existing PCB layouts and automated assembly processes.

IPB600N25N3GATMA1 Advantages vs Typical Alternatives

This device offers superior efficiency and current handling compared to typical alternatives, thanks to its exceptionally low R_DS(on) and advanced trench technology. Its robust construction and wide temperature range enhance reliability, making it a preferred choice for engineers who demand stable, high-performance power switching in industrial and automotive systems. Reduced conduction losses further distinguish it from standard power MOSFETs.

Applications typiques

• Automotive powertrain and electric vehicle systems benefit from the high current capability and low on-resistance, improving overall efficiency and reducing thermal load in critical modules.
• Industrial motor drives utilize these MOSFETs for reliable, low-loss switching, supporting precise control and durability in high-demand operations.
• Switch mode power supplies (SMPS) leverage the fast switching and robust voltage ratings for improved energy conversion and compact design.
• Uninterruptible power supplies (UPS) and power management modules employ this device for dependable high-current switching and overload protection.

IPB600N25N3GATMA1 Brand Info

The IPB600N25N3GATMA1 is a specialized N-channel trench MOSFET crafted to meet the rigorous standards of modern industrial and automotive applications. With a proven track record for quality and performance, this product embodies advanced engineering focused on efficiency, reliability, and ease of integration. Its robust feature set makes it a strong choice for designers and sourcing professionals seeking a trustworthy solution for high-power circuit requirements.

FAQ

What package type does the IPB600N25N3GATMA1 use?

This device is supplied in a TO-263 package, which is widely recognized for its ease of mounting and excellent thermal performance. The package supports automated PCB assembly, making it highly suitable for high-volume manufacturing environments.

What makes the IPB600N25N3GATMA1 suitable for automotive applications?

Its high current rating, low on-resistance, and trench MOSFET technology ensure efficient and reliable operation in automotive powertrains, electric vehicle modules, and other demanding vehicular environments where durability and performance are critical.

Can this MOSFET operate in extreme temperature conditions?

Yes, the device is rated for operation across a wide temperature spectrum, from -55??C to +150??C. This versatility allows it to function reliably in both harsh industrial environments and automotive systems exposed to temperature variations.

What are the main benefits of the device’s low R_DS(on)?

The extremely low R_DS(on) value reduces power loss during conduction, resulting in improved energy efficiency and less heat generation. This enables more compact and cost-effective thermal management solutions in system designs.

How does the trench MOSFET technology enhance device performance?

Trench technology provides lower on-resistance and improved switching characteristics compared to older MOSFET designs. This results in greater efficiency, faster response times, and increased reliability in high-power switching applications.