IPB180P04P4L02ATMA2 Power MOSFET, 40V, 180A, TO-220 Package

IPB180P04P4L02ATMA2 Overview

The IPB180P04P4L02ATMA2 is a robust P-channel MOSFET designed for demanding industrial and commercial power management applications. Engineered for efficiency and reliability, this device features low on-resistance and high current handling, making it ideal for switching tasks in power supplies and control circuits. With its advanced packaging and optimized silicon, it delivers outstanding thermal performance and durability under rigorous operating conditions. Sourcing professionals and design engineers seeking dependable high-performance solutions for power switching will find this MOSFET to be a compelling choice. For further details and sourcing options, visit Fabricant de circuits intégrés.

IPB180P04P4L02ATMA2 Technical Specifications

Paramètres	Valeur
Type d'appareil	P-Channel MOSFET
Drain-Source Voltage (VDS)	-40 V
Continuous Drain Current (ID)	-180 A
RDS(on) (Max)	4.2 m??
Gate-Source Voltage (VGS)	?I20 V
Dissipation de puissance (PD)	300 W
Package / Case	D2PAK (TO-263-3)
Plage de température de fonctionnement	-55??C to +175??C

IPB180P04P4L02ATMA2 Key Features

• Low R_DS(on) (4.2 m?? max): Minimizes conduction losses, improving system efficiency in high-current switching applications.
• High Current Capability (-180 A): Supports demanding loads, making it suitable for robust power supply and motor control designs.
• Wide Safe Operating Area: Ensures reliable operation across a broad range of voltages and temperatures, ideal for industrial environments.
• Thermally Enhanced D2PAK Package: Provides excellent heat dissipation, supporting higher power densities and reliable long-term performance.

IPB180P04P4L02ATMA2 Advantages vs Typical Alternatives

Compared to standard P-channel MOSFETs, this device delivers significantly lower on-resistance, supporting higher efficiency and reduced power losses. The combination of high current handling and superior thermal management allows engineers to design compact, reliable systems, even in challenging thermal environments. Its robust performance and wide voltage tolerance offer a distinct advantage for demanding industrial power switching applications.

Applications typiques

• High-Current Power Switching: Ideal for use in server power supplies, DC-DC converters, and industrial power distribution systems where reliable, low-loss switching is critical.
• Motor Control Circuits: Supports heavy-duty motor drivers and automotive control units requiring efficient P-channel switching.
• Battery Management Systems: Provides safe, efficient disconnection and switching in energy storage and backup battery applications.
• Load Switching in Industrial Automation: Suitable for programmable logic controllers and relay replacement in automation equipment.

IPB180P04P4L02ATMA2 Brand Info

This device is part of a trusted line of power transistors built for industrial and commercial use. The product combines advanced trench MOSFET technology with proven reliability, offering excellent electrical performance and ruggedness. It is manufactured by a leading supplier known for high-quality discrete power semiconductors, ensuring consistent supply chain support and technical documentation tailored for professional engineers.

FAQ

What is the maximum drain current for the IPB180P04P4L02ATMA2?

This P-channel MOSFET supports a continuous drain current of up to -180 A, making it suitable for high-load switching applications that demand robust current handling and reliability.

Which package type does the device come in?

The device is offered in a thermally enhanced D2PAK (TO-263-3) surface-mount package, which facilitates efficient heat dissipation and is well-suited for automated PCB assembly processes.

What is the recommended operating temperature range?

The recommended operating temperature range is from -55??C to +175??C, allowing this MOSFET to function reliably in both extreme cold and high-temperature industrial environments.

How does the R_DS(on) value benefit my application?

The low R_DS(on) value of 4.2 m?? reduces conduction losses, which increases energy efficiency and minimizes heat generation in demanding power switching and control applications.

Is the device suitable for automotive or battery management systems?

Yes, its high current capability, low R_DS(on), and broad temperature range make it an excellent choice for automotive, battery management, and other high-reliability power control applications.