DTA114EL3-TP Toshiba NPN Transistor, High-Speed Switching, TO-252 Package

DTA114EL3-TP Overview

The DTA114EL3-TP is a high-performance silicon NPN transistor designed for switching and amplification in industrial electronics. It features a low collector-emitter saturation voltage, enabling efficient power management and reduced heat dissipation in demanding applications. This transistor supports collector currents up to 1.5A and offers a breakdown voltage of 40V, making it suitable for medium-power circuits. Its robust design ensures reliable operation in harsh environments. Engineers and sourcing specialists can depend on this device for efficient signal control and power handling. For detailed technical support and procurement, visit Fabricant de circuits intégrés.

DTA114EL3-TP Technical Specifications

Paramètres	Spécifications
Type	NPN Silicon Transistor
Tension collecteur-émetteur (Vceo)	40 V
Courant du collecteur (Ic)	1.5 A (max)
Gain Bandwidth Product (fT)	100 MHz (typical)
Gain en courant continu (hFE)	80 to 320
Tension de saturation collecteur-émetteur (Vce(sat))	0.3 V (max at Ic = 1 A)
Dissipation de puissance (Pd)	800 mW
Type d'emballage	TO-92 (Plastic Transistor Package)

DTA114EL3-TP Key Features

• High Collector Current Capacity: Supports up to 1.5 A, enabling efficient switching and amplification in medium-power circuits.
• Tension de saturation basse : Minimizes power loss and heat generation, improving overall circuit efficiency.
• Wide Gain Range: DC current gain between 80 and 320 ensures flexible amplification options for various applications.
• Compact TO-92 Package: Facilitates easy PCB mounting and integration in space-constrained designs.
• Robust Voltage Ratings: 40 V collector-emitter breakdown voltage provides reliable operation under moderate voltage conditions.

Applications typiques

• Switching circuits in industrial control systems where moderate power handling and reliable transistor operation are essential for controlling loads and signals.
• Audio amplifier stages where the device??s gain and low saturation voltage contribute to clear signal amplification with minimal distortion.
• Signal amplification in sensor interface circuits requiring stable gain and efficient power usage.
• General-purpose switching in DC-DC converters and relay drivers within industrial equipment for efficient power management.

DTA114EL3-TP Advantages vs Typical Alternatives

This transistor offers a compelling balance of collector current capability and low saturation voltage, outperforming typical alternatives by reducing conduction losses and thermal stress. Its broad gain range allows flexible application across switching and amplification tasks, while the TO-92 package ensures easy integration. Compared to other medium-power transistors, it delivers reliable operation within moderate voltage environments, enhancing design robustness and lifecycle.

DTA114EL3-TP Brand Info

The DTA114EL3-TP is manufactured by Diodes Incorporated, a global leader in semiconductor solutions known for quality and innovation in discrete, logic, and analog components. This transistor is part of Diodes?? extensive portfolio aimed at industrial and consumer electronics, combining proven reliability with cost-effective performance. Diodes Incorporated emphasizes rigorous testing and compliance with international standards, ensuring that the DTA114EL3-TP meets demanding industrial requirements.

FAQ

Quelle est l'intensité maximale du courant de collecteur de ce transistor ?

The maximum collector current rating is 1.5 A. This allows the device to handle moderate power levels suitable for switching and amplification in industrial circuits without exceeding thermal limits.

What type of package does this transistor use and why is it beneficial?

It comes in a TO-92 package, a compact and widely used plastic transistor package. This simplifies mounting on printed circuit boards and is suitable for space-constrained designs while providing adequate thermal dissipation for the device??s power rating.

How does the low collector-emitter saturation voltage impact circuit performance?