DTA113ZE-TP NPN Transistor 40V 0.3A SOT-23 Package by Diodes Incorporated

DTA113ZE-TP Overview

The DTA113ZE-TP is a high-performance, single NPN transistor designed for general-purpose amplification and switching applications. It features robust electrical characteristics, making it suitable for a wide range of industrial and consumer electronics uses. With a compact SOT-23 package, this device offers ease of integration into space-constrained PCB layouts. It supports medium power handling and moderate switching speeds, ensuring reliable operation in signal processing and control circuits. The DTA113ZE-TP is a preferred choice for engineers seeking a versatile transistor with consistent gain and switching performance. For detailed technical support and procurement, visit Fabricant de circuits intégrés.

DTA113ZE-TP Technical Specifications

Paramètres	Spécifications
Type de transistor	NPN Bipolar Junction Transistor (BJT)
Tension collecteur-émetteur (VPDG)	40 V
Courant de collecteur (IC)	200 mA
Dissipation de puissance (Ptot)	350 mW
Gain actuel (hFE)	100 to 300 (typical)
Fréquence de transition (fT)	100 MHz (typical)
Paquet	SOT-23
Plage de température de fonctionnement	De -55°C à +150°C
Tension de l'émetteur de base (VBE)	0.7 V (typical)

DTA113ZE-TP Key Features

• High current gain: Provides amplified output for low input signals, improving circuit sensitivity and response.
• Compact SOT-23 package: Enables space-saving PCB designs, facilitating high-density industrial electronics layouts.
• Reliable switching capability: Supports up to 200 mA collector current, suitable for medium-power switching applications.
• Wide operating temperature: Ensures consistent performance in harsh industrial environments from -55??C to 150??C.

Applications typiques

• Signal amplification in consumer and industrial electronic devices where moderate gain and switching speed are required.
• Switching elements in control circuits, enabling reliable operation in automation and instrumentation systems.
• Interface stages in communication devices, supporting signal conditioning and level shifting.
• General-purpose transistor use in low to medium power circuits including sensor drivers and LED drivers.

DTA113ZE-TP Advantages vs Typical Alternatives

This transistor offers a balanced combination of moderate power handling, high gain, and compact packaging, providing engineers with flexibility over typical alternatives. Its stable operation across a wide temperature range ensures reliability in industrial applications. The integration-friendly SOT-23 package reduces board space without compromising electrical performance, making it preferable for modern compact electronics compared to bulkier transistors with similar specs.

DTA113ZE-TP Brand Info

The DTA113ZE-TP is produced by Diodes Incorporated, a global supplier of high-quality discrete, logic, and analog semiconductor components. Known for their focus on robust design and efficient manufacturing, Diodes Incorporated ensures this transistor meets stringent industrial standards. The product benefits from the company??s extensive application support and global distribution network, making it a reliable choice for engineers and sourcing specialists worldwide.

FAQ

Quelle est l'intensité maximale du courant de collecteur de ce transistor ?

The maximum continuous collector current is specified at 200 mA. This allows the device to handle moderate power loads typical in switching and amplification tasks without risk of damage under normal operating conditions.

Can the transistor operate reliably at elevated temperatures?

Yes, it supports an operating temperature range from -55??C up to +150??C, ensuring stable electrical performance in environments with significant temperature variations, common in industrial and automotive applications.

What package type is used and what are its benefits?

The transistor comes in a SOT-23 package, which is a compact, surface-mount form factor. This package minimizes PCB footprint, enhances heat dissipation, and is compatible with automated assembly processes, making it ideal for dense circuit designs.

What typical applications is this transistor suited for?

This device is suitable for a variety of