CY7C1020B-15VC Overview
The CY7C1020B-15VC is a high-performance 1M-bit Static RAM (SRAM) device designed for fast, reliable data storage in embedded systems and industrial applications. Operating at a 15 ns access time, it provides quick read/write cycles with a low power profile, ensuring efficient system performance. The asynchronous SRAM architecture supports straightforward interfacing with a wide range of microcontrollers and processors, making it ideal for memory-intensive applications. Packaged in a 32-pin plastic dual in-line package (PDIP), this SRAM balances ease of integration with robust electrical characteristics. For detailed technical data and purchasing information, visit Fabricant de circuits intégrés.
CY7C1020B-15VC Technical Specifications
Paramètres | Spécifications |
---|---|
Taille de la mémoire | 1M-bit (131,072 x 8) |
Temps d'accès | 15 ns (nanoseconds) |
Tension de fonctionnement | 5V ??10% |
Input/Output Configuration | 8-bit data bus |
Type d'emballage | 32-pin PDIP |
Standby Power Supply Current | 15 mA (maximum) |
Plage de température de fonctionnement | 0??C to +70??C |
Data Retention Voltage | 4.5V (minimum) |
Chip Enable (CE) and Output Enable (OE) | Active low |
Write Enable (WE) | Active low |
CY7C1020B-15VC Key Features
- Fast 15 ns access time: Enables rapid data retrieval and storage, improving system throughput in timing-critical applications.
- Asynchronous SRAM architecture: Simplifies integration with various microprocessors by eliminating the need for clock synchronization.
- Low standby current: Reduces power consumption during idle states, extending device and system longevity.
- 8-bit data bus width: Supports byte-wide data operations, compatible with standard 8-bit microcontrollers and processors.
- Large gamme de températures de fonctionnement : Ensures reliable performance in industrial and commercial environments.
- Standard 32-pin PDIP packaging: Facilitates easy prototyping and through-hole PCB mounting.
- Robust voltage tolerance: Maintains data integrity within the specified voltage ranges including data retention mode.
CY7C1020B-15VC Advantages vs Typical Alternatives
Compared to typical SRAM alternatives, this device offers a competitive 15 ns access time combined with low standby current, delivering both speed and power efficiency. Its asynchronous design avoids the complexity of clocked SRAMs, enabling easier system integration. The robust operating voltage and temperature range enhance reliability in demanding industrial settings. Overall, this SRAM balances high performance with dependable operation, making it a practical choice for engineers seeking a proven memory solution.
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Applications typiques
- Embedded Systems Memory: Ideal for buffering and storage in microcontroller-based designs requiring fast, non-volatile data access and stability across temperature variations.
- Cache Memory: Acts as a high-speed cache in computing architectures, improving system responsiveness and reducing processor wait states.
- Industrial Control Equipment: Supports real-time data storage in automation systems that operate under varied environmental conditions.
- Communication Devices: Provides fast temporary storage for network routers, switches, and other communication hardware.
CY7C1020B-15VC Brand Info
This SRAM device is part of a legacy series widely recognized in the semiconductor industry for dependable static RAM solutions. The product line emphasizes high speed and low power consumption tailored for embedded and industrial applications. Known for consistent manufacturing standards, the brand ensures that each part meets stringent quality and reliability benchmarks. The CY7C1020B-15VC continues to support engineers and sourcing specialists with a robust memory option suitable for legacy and new designs requiring asynchronous SRAM technology.
FAQ
What is the primary use case for the CY7C1020B-15VC SRAM?
This SRAM is primarily used for fast, volatile data storage in embedded systems, industrial controls, and computing applications that require quick read/write access without the complexity of synchronous memory management.
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