CY62147DV30L-70ZSXI 512Kb SRAM Memory IC – 30ns Access Time, SOIC-28 Package

  • This device provides high-speed synchronous static RAM, enabling efficient data buffering and fast access in digital systems.
  • With a 70 ns access time, memory retrieval is optimized for time-sensitive applications requiring quick data turnaround.
  • The compact SOJ package minimizes board space, allowing for more efficient layout in dense circuit designs.
  • Ideal for use in networking equipment, it supports rapid data exchange and enhances overall system performance.
  • Manufactured to meet strict quality standards, it ensures consistent operation and long-term reliability in various environments.
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CY62147DV30L-70ZSXI Overview

The CY62147DV30L-70ZSXI is a 4Mbit (512K x 8) CMOS static RAM (SRAM) designed for high-speed, low-power memory applications. Operating at a 3.0V power supply with fast access times of 70ns, this SRAM provides reliable performance with low current consumption, making it ideal for industrial and embedded systems requiring stable data retention. Featuring a standard 28-pin SOJ package, it is well-suited for board-level integration where space and power efficiency are critical. The device supports a broad temperature range, ensuring dependable operation in harsh environments. Available through Fabricant de circuits intégrés, it meets stringent quality and performance standards for advanced memory solutions.

CY62147DV30L-70ZSXI Technical Specifications

Paramètres Spécifications
Densité de la mémoire 4Mbit (512K x 8 bits)
Temps d'accès 70 ns
Tension de fonctionnement 2.7 V to 3.6 V (Nominal 3.0 V)
Type d'emballage 28-pin SOJ (Small Outline J-lead)
Data Retention Voltage 1.5 V (Minimum)
Plage de température de fonctionnement De -40°C à +85°C
Input/Output Type TTL compatible
Standby Current 1 ??A (typical)
Active Current 30 mA (typical)

CY62147DV30L-70ZSXI Key Features

  • Fast 70ns Access Time: Enables high-speed data retrieval critical for system performance in timing-sensitive applications.
  • Faible consommation d'énergie : Active current of 30mA with a minimal standby current of 1??A reduces overall energy usage, extending battery life in portable devices.
  • Large gamme de tensions de fonctionnement : Supports operation from 2.7V to 3.6V, offering flexibility for different power supply designs and ensuring compatibility with 3.0V systems.
  • Robust Temperature Tolerance: Operational from -40??C to +85??C, suitable for industrial and automotive environments requiring reliable memory under extreme conditions.
  • Standard 28-pin SOJ Package: Facilitates easy integration into existing PCB layouts with a compact footprint and proven mechanical reliability.
  • Data Retention Mode: Maintains data integrity down to 1.5V, ensuring information is preserved during power fluctuations or low-voltage conditions.

CY62147DV30L-70ZSXI Advantages vs Typical Alternatives

This SRAM device offers superior speed and lower power consumption compared to many traditional static RAMs, making it a preferred choice for applications where performance and energy efficiency are paramount. Its broad voltage and temperature ranges provide enhanced reliability in industrial contexts, surpassing typical alternatives that may have narrower operating conditions. The small SOJ package further optimizes board space, enabling more compact system designs without compromising memory capacity or speed.

Applications typiques

  • Embedded systems requiring high-speed, low-power memory for buffering and temporary data storage in industrial control and instrumentation.
  • Networking equipment where fast memory access supports efficient data packet handling and routing performance.
  • Portable electronics that benefit from low standby current to maximize battery life during idle conditions.
  • Automotive electronics demanding wide temperature range operation and reliable data retention in harsh environments.

CY62147DV30L-70ZSXI Brand Info

The CY62147DV30L-70ZSXI is manufactured by a leading semiconductor company specializing in high-performance memory solutions. This product line focuses on providing robust and efficient SRAM devices designed to meet the rigorous demands of industrial, automotive, and embedded applications. The brand is recognized for its commitment to quality, reliability, and innovation, ensuring that each memory component aligns with global standards and customer specifications for critical electronic systems.

FAQ

What is the typical operating voltage for this SRAM?

The typical operating voltage for this SRAM is 3.0 volts, with a supported range from 2.7V to 3.6V. This allows it to function efficiently within standard 3.0

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