CY62126DV30L-55ZIT 128K x 8 CMOS SRAM Memory – 28-Pin SOP Package

  • This device provides high-speed static RAM functionality, enabling fast data access and efficient memory management.
  • Operating at 55 ns access time, it supports quick read/write cycles essential for performance-critical applications.
  • The LFCSP package offers a compact footprint, optimizing board space for dense electronic designs.
  • Ideal for use in embedded systems requiring reliable, low-latency memory to enhance processing speed and system responsiveness.
  • Manufactured with stringent quality controls, ensuring consistent performance and long-term operational reliability.
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CY62126DV30L-55ZIT Overview

The CY62126DV30L-55ZIT is a high-performance static RAM (SRAM) device designed to deliver fast and reliable memory storage for industrial and embedded applications. Offering a 1 Megabit (128K x 8-bit) density, this SRAM operates at a 55 ns access time, ensuring rapid data retrieval and seamless system performance. It supports a single 3.0 V power supply, optimizing power consumption while maintaining robust operation across a wide temperature range. Packaged in a compact 28-pin TSOP II form factor, it simplifies PCB layout and integration. This device is ideal for buffering, caching, and temporary data storage in applications requiring low latency and high reliability. See more at Fabricant de circuits intégrés.

CY62126DV30L-55ZIT Technical Specifications

Paramètres Spécifications
Densité de la mémoire 1 Megabit (128K x 8-bit)
Temps d'accès 55 ns
Tension de fonctionnement 3.0 V ?? 0.3 V
Standby Current 5 ??A (typical)
Plage de température de fonctionnement De -40 ??C à +85 ??C
Type d'emballage 28-pin TSOP II
Data Retention Voltage 2.0 V (minimum)
Input/Output Configuration Bidirectional 8-bit data bus
Consommation électrique 60 mW (typical)
Interface Asynchronous SRAM

CY62126DV30L-55ZIT Key Features

  • Fast 55 ns access time: Enables quick read/write cycles, minimizing latency in data-intensive applications.
  • Low voltage operation at 3.0 V: Supports energy-efficient designs, reducing overall power consumption without sacrificing performance.
  • Wide industrial temperature range (-40 ??C to +85 ??C): Ensures reliable operation in harsh environments and industrial-grade applications.
  • Compact 28-pin TSOP II package: Offers space-saving integration for high-density circuit boards while maintaining easy handling and mounting.
  • Low standby current: Helps extend system battery life in portable and power-sensitive equipment.
  • Asynchronous SRAM interface: Simplifies timing requirements for system designers, allowing flexible control over data access.
  • 8-bit bidirectional data bus: Facilitates seamless data communication with microcontrollers and processors.

CY62126DV30L-55ZIT Advantages vs Typical Alternatives

This SRAM device delivers superior speed and low power consumption compared to typical memory alternatives. Its 3.0 V operation enhances energy efficiency, while the extended industrial temperature range guarantees dependable performance in demanding environments. The compact TSOP II packaging supports high-density PCB designs, offering a balance of integration ease and robustness unmatched by larger or less power-optimized SRAMs.

Applications typiques

  • Embedded system memory buffers requiring fast and reliable temporary data storage to maintain system responsiveness and integrity in real-time processing.
  • Cache memory for industrial controllers, where low latency access is critical for high-speed data handling and control algorithms.
  • Networking equipment, providing quick data access and buffering to support high-throughput communications.
  • Portable instrumentation, leveraging low standby current and compact packaging to extend battery life while saving PCB space.

CY62126DV30L-55ZIT Brand Info

The CY62126DV30L-55ZIT is part of a proven family of SRAM products known for their reliability and performance in industrial and embedded markets. Designed and manufactured under stringent quality controls, this device embodies the brand??s commitment to delivering memory solutions that meet the rigorous demands of modern electronics design. Its robust feature set and optimized specifications reflect extensive semiconductor engineering expertise, making it a trusted choice for engineers and sourcing specialists worldwide.

FAQ

What voltage levels does this SRAM support for operation and data retention?

The device operates at a nominal voltage of 3.0 V with a tolerance of ??0.3 V, ensuring stable performance. For data retention during power-down modes,

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