ASMT-JB31-NNP01 Optical Sensor Module ?C High Precision, Compact Package

ASMT-JB31-NNP01 Overview

The ASMT-JB31-NNP01 is a high-performance phototransistor designed for precise optical detection and switching applications. Engineered to deliver consistent sensitivity and fast response times, it integrates seamlessly into various industrial and consumer electronic systems. Its compact package and reliable construction ensure durability under diverse operating conditions. Ideal for engineers and sourcing specialists seeking robust optoelectronic components, this device offers efficient light-to-electrical signal conversion with low power consumption. Available through Fabricant de circuits intégrés, it supports streamlined integration into automation, sensing, and control circuits requiring dependable infrared detection capabilities.

ASMT-JB31-NNP01 Technical Specifications

Paramètres	Spécifications
Detector Type	Phototransistor
Package Style	Trou de passage
Peak Sensitivity Wavelength	940 nm
Tension collecteur-émetteur (VPDG)	30 V (max)
Courant de collecteur (IC)	50 mA (max)
Dark Current	?? 100 nA
Response Time (Rise/Fall)	20 ??s / 30 ??s
Plage de température de fonctionnement	-25 to +85 ??C
Plage de température de stockage	-40 to +100 ??C
Spectral Response Range	800 to 1100 nm

ASMT-JB31-NNP01 Key Features

• High Sensitivity at 940 nm: Optimized for infrared detection, ensuring precise light measurement and improved signal accuracy in diverse lighting environments.
• Vitesse de commutation rapide : With rise and fall times of 20 ??s and 30 ??s respectively, it supports rapid response applications such as optical encoders and proximity sensors.
• Faible courant d'obscurité : Minimizes noise interference in low-light conditions, enhancing detection reliability and reducing false triggers.
• Large gamme de températures de fonctionnement : Maintains stable performance from -25 ??C to +85 ??C, suitable for demanding industrial environments.
• Compact Through-Hole Package: Facilitates easy mounting and soldering for prototyping and production in various board layouts.
• Robust Collector-Emitter Voltage Rating: Supports up to 30 V, providing durability and compatibility with standard industrial power levels.
• Broad Spectral Response: Covers 800 to 1100 nm wavelength range, enabling versatility in infrared sensing applications.

ASMT-JB31-NNP01 Advantages vs Typical Alternatives

This phototransistor offers superior sensitivity and faster response times compared to typical infrared detectors, resulting in enhanced detection accuracy and quicker signal processing. Its low dark current reduces noise, improving system reliability. Additionally, the wide operating temperature tolerance and robust voltage ratings provide greater durability and integration flexibility, making it a preferable choice for industrial sensing systems where precision and reliability are critical.

Applications typiques

• Infrared remote control receivers in consumer electronics, enabling accurate signal detection and quick response to user inputs.
• Optical encoders for motion control and position sensing in automation equipment requiring precise feedback.
• Proximity sensors in industrial machinery to detect object presence and enhance safety protocols.
• Light barrier systems for counting and detection in packaging and material handling processes.

ASMT-JB31-NNP01 Brand Info

The ASMT-JB31-NNP01 is part of a specialized product line from a leading manufacturer dedicated to optoelectronic components. This brand focuses on delivering reliable, high-quality phototransistors optimized for industrial and consumer applications. Emphasizing consistent performance and ease of integration, the product supports diverse use cases requiring precise infrared light detection. The brand??s commitment to rigorous quality control and innovation ensures that these components meet stringent industry standards, providing engineers and sourcing professionals with dependable solutions for advanced optical sensing needs.

FAQ

What type of package does the ASMT-JB31-NNP01 use?

This device uses a through-hole package, which is suitable for easy mounting and reliable soldering on printed circuit boards. This packaging type is common in both prototyping and production environments due to its mechanical stability.

What is the peak sensitivity wavelength of this phototransistor?

The peak sensitivity wavelength is centered at 940 nm, aligning with infrared light commonly used in remote controls and optical sensing applications. This wavelength ensures optimal detection efficiency and signal clarity.

What are the typical response times for this phototransistor?

The response times include a rise time of approximately 20 microseconds and a fall time near 30 microseconds. These values indicate fast switching behavior suitable for real-time detection and high-speed optical communication.

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage is rated at 30 volts. This rating allows the device to operate safely within standard voltage levels used in industrial and consumer circuits without risk of damage.

In what temperature ranges can this device reliably operate?

The phototransistor maintains reliable operation within a temperature range from -25 ??C up to +85 ??C, accommodating various industrial environments and ensuring stable performance under fluctuating thermal conditions.