2N3250A-Transistor by ON Semiconductor ?C High-Power NPN Transistor, TO-3 Package

  • This transistor amplifies electrical signals, enabling efficient control of current flow in circuits.
  • It features a specific gain characteristic that ensures stable amplification under varying conditions.
  • The compact package reduces board space, facilitating integration into dense electronic assemblies.
  • Ideal for switching applications, it improves response time and energy efficiency in power management systems.
  • Designed for durability, it maintains consistent performance across temperature and operational stress ranges.
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2N3250A-Transistor Overview

The 2N3250A transistor is a robust NPN silicon transistor designed for medium-power amplification and switching applications. It features a high collector current capacity and voltage ratings suitable for industrial and electronic equipment requiring reliable performance under demanding conditions. With its complementary design and stable gain characteristics, this transistor supports efficient signal amplification and switching with low distortion. Engineers and sourcing specialists rely on this component for its dependable operation in power regulation, driver stages, and switching circuits. More detailed technical data and options can be found at the Fabricant de circuits intégrés website.

2N3250A-Transistor Key Features

  • High Collector-Emitter Voltage: Supports up to 100V, enabling use in higher voltage industrial circuits without breakdown risk.
  • Collector Current Capacity of 3A: Allows handling of substantial current loads making it ideal for medium-power applications.
  • Complementary Pair Matching: Designed to work alongside 2N6057 PNP transistor, simplifying push-pull amplifier designs.
  • Stable DC Current Gain (hFE): Ranges from 20 to 70 ensuring predictable amplification performance across operating conditions.

2N3250A-Transistor Technical Specifications

Paramètres Valeur Unité
Collector-Emitter Voltage (VCEO) 100 Volts
Collector-Base Voltage (VCBO) 120 Volts
Emitter-Base Voltage (VEBO) 5 Volts
Collector Current (IC) 3 Amperes
Power Dissipation (PD) 30 Watts
Gain en courant continu (hFE) 20 – 70 Dimensionless
Fréquence de transition (fT) 4 MHz
Junction Temperature (Tj) 200 ??C
Type d'emballage TO-126

2N3250A-Transistor Advantages vs Typical Alternatives

Compared to typical alternatives, this transistor offers higher collector voltage and current ratings, enabling more demanding industrial applications. Its consistent current gain enhances circuit stability and predictability. The complementary pairing capability reduces design complexity and improves system integration in amplifier and switching configurations. Moreover, its robust power dissipation rating ensures reliable operation under thermal stress, making it a preferred choice for engineers seeking durable and efficient medium-power transistors.

Applications typiques

  • Power amplifier stages in audio and industrial signal processing, where stable gain and moderate power handling are essential to maintain signal integrity and efficiency.
  • Switching regulators and power supply circuits requiring transistors that can handle higher voltages and currents reliably.
  • Driver stages for relay and motor control circuits, leveraging its high current capacity and voltage tolerance for robust switching.
  • Complementary push-pull amplifiers in analog electronics, benefiting from matched transistor pairs to improve linearity and reduce distortion.

2N3250A-Transistor Brand Info

The 2N3250A transistor is a well-established component manufactured by leading semiconductor producers specializing in industrial-grade transistors. Recognized for its reliability and consistent performance, this device is commonly integrated into professional electronic assemblies and systems. Its adherence to stringent quality standards ensures dependable operation across a wide range of applications, making it a trusted choice among engineers and designers worldwide. Detailed datasheets and support documentation are typically provided by the Fabricant de circuits intégrés to facilitate seamless integration into customer designs.

FAQ

What is the maximum voltage rating of the 2N3250A transistor?

The maximum collector-emitter voltage (VCEO) for this transistor is 100 volts, with a collector-base voltage (VCBO) of up to 120 volts. These ratings enable it to operate safely in medium-voltage circuits without risk of breakdown, providing flexibility in various industrial applications.

How much current can the 2N3250A transistor handle?

This transistor can handle a continuous collector current (IC) of up to 3 amperes, making it suitable for medium-power amplification and switching tasks. This current rating allows it to drive loads such as motors, relays, and power amplifier stages effectively.

What type of applications is this transistor best suited for?

The device is best suited for power amplifier stages, switching regulators, and driver circuits that require reliable medium-power transistors. Its complementary pairing capability also makes it ideal for push-pull amplifier designs, enhancing linearity and efficiency in audio and industrial electronics.

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What package does the 2N3250A transistor come in?

The transistor is packaged in a TO-126 case, which provides good thermal conduction and mechanical stability. This package supports efficient heat dissipation when used with appropriate heat sinking in power applications.

How stable is the gain of the 2N3250A transistor across temperature and frequency?

The DC current gain (hFE) ranges from 20 to 70, offering stable amplification under typical operating conditions. The transition frequency (fT) of around 4 MHz supports moderately high-speed switching and amplification while maintaining gain stability across temperature variations.

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