2N2218-Transistor by ON Semiconductor | NPN Amplifier Transistor | TO-18 Package

2N2218-Transistor Overview

The 2N2218 transistor is a high-performance NPN bipolar junction transistor widely used in amplification and switching applications. Designed for medium power and high-frequency operation, it offers reliable gain characteristics and a maximum collector current of 0.8 A. Its versatility makes it suitable for audio amplifiers, driver stages, and general-purpose switching circuits. The device exhibits a voltage rating of 30 V and a transition frequency of up to 150 MHz, enabling efficient operation in RF and small signal circuits. For sourcing and technical details, visit Fabricant de circuits intégrés.

2N2218-Transistor Key Features

• High transition frequency: Up to 150 MHz, allowing effective use in RF and high-speed amplification circuits.
• Moderate power handling: Collector current rating of 0.8 A supports medium power applications without thermal overstress.
• Low noise figure: Suitable for low-level signal amplification, enhancing signal integrity in sensitive circuits.
• Robust voltage rating: Collector-emitter voltage up to 30 V enables use in a variety of voltage environments with reliable switching performance.

2N2218-Transistor Technical Specifications

Paramètres	Valeur	Unité
Type de transistor	NPN
Tension collecteur-émetteur (VPDG)	30	V
Courant de collecteur (IC)	0.8	A
Dissipation de puissance (Ptot)	0.625	W
Fréquence de transition (fT)	150	MHz
Gain Largeur de bande Produit	150	MHz
Gain en courant continu (hFE)	40 to 300
Tension collecteur-base (VCBO)	60	V
Tension de base de l'émetteur (VEBO)	5	V
Type d'emballage	TO-18 Metal Can

2N2218-Transistor Advantages vs Typical Alternatives

This transistor delivers a balanced combination of moderate power capability and high-frequency response, outperforming many general-purpose transistors in RF and small signal amplification roles. Its low noise and stable gain characteristics enhance signal accuracy and system reliability. Compared to typical alternatives, it supports a wider voltage range and higher collector current, making it a preferred choice for engineers seeking precise switching and amplification in industrial and communication applications.

Applications typiques

• RF amplifiers and oscillator circuits requiring high transition frequency and low noise performance for effective signal processing.
• Audio preamplifiers and driver stages where linearity and stable gain improve sound quality and system response.
• Switching circuits in control systems, offering reliable operation with moderate power handling capabilities.
• General-purpose amplification in industrial electronics, providing consistent performance across varying voltage environments.

2N2218-Transistor Brand Info

The 2N2218 transistor is a widely recognized semiconductor device offered by multiple IC manufacturers under industry-standard specifications. It is known for its metal TO-18 package, which ensures thermal stability and durability in demanding environments. This product line maintains strict quality control and adherence to JEDEC standards, making it a dependable component for engineers and sourcing specialists engaged in high-frequency and medium-power electronic designs.

FAQ

Quelle est l'intensité maximale du courant de collecteur de ce transistor ?

The maximum collector current for the 2N2218 transistor is 0.8 amperes. This rating allows it to handle moderate power levels suitable for amplification and switching tasks in industrial applications without thermal damage.

Can this transistor be used in RF amplifier circuits?

Yes, the 2N2218 is well-suited for RF amplifier circuits due to its high transition frequency of up to 150 MHz, which supports efficient high-frequency signal amplification and oscillator functions.

What type of package does this transistor come in?

This device is packaged in a TO-18 metal can, which provides effective heat dissipation and mechanical protection, enhancing reliability in industrial operating conditions.

What is the voltage rating between collector and emitter?

The collector-emitter voltage rating (V_PDG) is 30 volts, making this transistor appropriate for medium-voltage applications while maintaining safe operating margins.

How does the 2N2218 transistor compare in noise performance?

The transistor has a low noise figure, making it suitable for low-level signal amplification where maintaining signal integrity is critical. This characteristic improves overall circuit accuracy and sensitivity.