2N1485-Transistor NPN Amplifier Transistor in TO-18 Metal Can Package by ON Semiconductor

2N1485-Transistor Overview

The 2N1485 transistor is a silicon NPN bipolar junction transistor (BJT) commonly utilized in medium power amplification and switching applications. Designed for general-purpose use, this device offers stable performance in low to moderate frequency circuits. Its robust construction and reliable electrical characteristics make it suitable for industrial control systems, audio amplifiers, and signal processing tasks. The transistor??s moderate current and voltage ratings ensure compatibility with a broad range of electronic designs requiring dependable transistor operation. For detailed specifications and sourcing, visit Fabricant de circuits intégrés.

2N1485-Transistor Technical Specifications

Paramètres	Spécifications
Type	NPN Bipolar Junction Transistor
Tension collecteur-émetteur (VPDG)	60 V
Tension collecteur-base (VCBO)	75 V
Tension de base de l'émetteur (VEBO)	7 V
Courant de collecteur (IC)	3 A (max)
Dissipation de puissance (Ptot)	30 W
Gain Produit de largeur de bande (fT)	30 MHz (typical)
Gain en courant continu (hFE)	40 to 300 (depending on operating conditions)
Type d'emballage	TO-39 Metal Can

2N1485-Transistor Key Features

• High Power Handling: Supports collector currents up to 3 A with power dissipation of 30 W, enabling reliable operation in medium power circuits.
• Moderate Voltage Ratings: Collector-emitter voltage rating up to 60 V ensures suitability for a wide range of switching and amplification tasks.
• Wide DC Gain Range: Offers a DC current gain between 40 and 300, allowing flexible gain settings for various circuit requirements.
• Robust TO-39 Package: The metal can package provides excellent thermal conductivity and mechanical durability for industrial environments.

Applications typiques

• Medium power amplifier stages in audio or signal processing circuits, where linear amplification and moderate frequency response are essential.
• Switching elements in industrial control systems requiring reliable transistor switching with moderate current and voltage ratings.
• Driver stages for relays and solenoids, benefiting from the transistor??s ability to handle currents up to 3 A.
• General-purpose amplification tasks in low to medium frequency analog circuits within instrumentation and control electronics.

2N1485-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of moderate voltage and current ratings with reliable gain characteristics, making it advantageous over alternatives that may lack sufficient power handling or have narrower gain ranges. The robust TO-39 metal can package enhances thermal performance and mechanical stability, which is critical in harsh industrial environments. These features ensure dependable operation and integration ease for engineers sourcing components for medium power amplification and switching applications.

2N1485-Transistor Brand Info

The 2N1485 transistor is a well-established device originally introduced by major semiconductor manufacturers such as Motorola and Texas Instruments. It remains a popular choice in the electronics industry due to its proven performance and availability from multiple reputable suppliers. Typically supplied in a TO-39 metal can package, the 2N1485 is recognized for robust construction and consistent electrical characteristics, making it a trusted component in industrial and commercial electronic designs.

FAQ

What is the maximum collector current of this transistor?

The maximum collector current rating for this device is 3 amperes, allowing it to handle moderate power loads typical in switching and amplification circuits.

What package type does the 2N1485 come in?

This transistor is housed in a TO-39 metal can package, which offers good thermal dissipation and mechanical protection, especially important for industrial applications.

Can this transistor be used in high-frequency applications?

While the gain bandwidth product is around 30 MHz, this transistor is best suited for low to medium frequency applications rather than high-frequency RF circuits.

What is the typical voltage rating for this transistor