2N3439L-Transistor NPN RF Amplifier Transistor in TO-66 Metal Can Package by ON Semiconductor

2N3439L-Transistor Overview

The 2N3439L is a high-frequency NPN transistor widely used in RF and amplifier circuits. Designed for applications requiring reliable gain and frequency response, this transistor offers a balance of power handling and linearity. Its robust construction supports continuous operation in demanding industrial environments. Suitable for switching and amplification tasks, it ensures stable performance across a wide voltage and current range. Engineers and sourcing specialists will appreciate its compatibility with common circuit topologies and its availability from Fabricant de circuits intégrés, making it an excellent choice for reliable, cost-effective electronics designs.

2N3439L-Transistor Technical Specifications

2N3439L-Transistor Key Features

• High transition frequency: Enables operation in RF amplification up to 200 MHz, supporting efficient signal processing in communication devices.
• Moderate power dissipation: Supports power handling up to 625 mW, allowing for reliable operation without excessive heat buildup.
• Wide current gain range: Offers flexibility in circuit design with h_FE values between 40 and 160, providing stable amplification across varying conditions.
• Caractéristiques de faible bruit : Ideal for sensitive RF front-end stages where minimizing signal distortion is critical for system performance.

Applications typiques

• RF Amplification Circuits: Widely used in radio frequency amplifiers for communication equipment, where frequency response and gain linearity are essential for signal clarity.
• Switching Circuits: Suitable for medium-speed switching applications in industrial control systems requiring reliable transistor operation.
• Oscillator Circuits: Employed in low to moderate frequency oscillators to generate stable waveforms for signal generation and timing devices.
• Pre-Amplifier Stages: Used in audio and RF pre-amplifiers to boost weak input signals with low noise contribution, enhancing overall system sensitivity.

2N3439L-Transistor Advantages vs Typical Alternatives

This transistor stands out with its combination of high-frequency operation and low noise performance, making it a preferred choice over typical low-frequency or high-noise alternatives. Its moderate power rating and wide gain range deliver adaptability in diverse circuit designs while ensuring consistent reliability. The TO-18 package provides robust thermal management, further enhancing durability compared to plastic-encapsulated transistors.

2N3439L-Transistor Brand Info

The 2N3439L transistor is a legacy semiconductor device originally produced by multiple manufacturers specializing in discrete transistor technologies. It is recognized for its NPN high-frequency capabilities and metal can TO-18 packaging, which ensures excellent thermal and mechanical stability. This transistor remains available through various distributors and IC manufacturers who supply components for industrial, communications, and instrumentation applications. Its widespread adoption is supported by standardized specifications and proven performance in RF and analog circuits.

FAQ

What is the maximum collector current allowed for this transistor?

The maximum collector current for this device is 200 mA. It is essential to operate within this limit to ensure reliable performance and prevent damage caused by excessive current flow.

Ce transistor peut-il être utilisé dans des applications de commutation à haute fréquence ?

Yes, with a transition frequency of 200 MHz, it is suitable for high-frequency switching tasks in RF circuits and other applications requiring fast switching speeds.

What package type does this transistor come in and why

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