QE4E050F01 Voltage Regulator IC – Power Management, SMD Package

QE4E050F01 Overview

The QE4E050F01 is a high-performance photodetector designed for precise optical sensing in industrial and automation environments. Featuring a compact form factor and optimized sensitivity, this device ensures reliable detection of light signals with fast response times. Its robust design supports stable operation across varying environmental conditions, making it ideal for integration into complex optical systems. The QE4E050F01 offers engineers and sourcing specialists a dependable solution for applications requiring accurate light measurement and efficient signal processing. For more detailed information, visit Fabricante de CI.

QE4E050F01 Technical Specifications

Parámetro	Especificación
Photodetector Type	PIN Photodiode
Active Area	0.5 mm2
Peak Sensitivity Wavelength	850 nm
Dark Current	?? 2 nA at 5 V Reverse Bias
Responsivity	0.55 A/W at 850 nm
Junction Capacitance	3 pF (typical)
Reverse Voltage	10 V Maximum
Rise Time	?? 1 ns
Tipo de envase	TO-46 Metal Can

QE4E050F01 Key Features

• High Responsivity: With a responsivity of 0.55 A/W at 850 nm, it ensures efficient conversion of light into electrical signals, enabling precise optical measurements.
• Baja corriente oscura: The device??s low dark current (?? 2 nA) reduces noise, improving signal integrity in low-light applications.
• Tiempo de respuesta rápido: Its rise time of less than 1 nanosecond supports high-speed detection, crucial for rapid optical communication and sensing systems.
• Compact, Rugged Package: The TO-46 metal can provides excellent thermal stability and mechanical protection, ensuring reliability in harsh industrial environments.

QE4E050F01 Advantages vs Typical Alternatives

The QE4E050F01 outperforms typical photodiodes with its superior sensitivity and ultrafast response time, enabling more accurate and timely optical detection. Its low dark current improves signal-to-noise ratio compared to standard devices, while the robust TO-46 package enhances durability and thermal management. These advantages make it a reliable choice for demanding industrial and automation applications requiring consistent performance and integration ease.

Aplicaciones típicas

• Optical communication receivers in industrial automation, where fast and sensitive light detection is required to maintain signal integrity and throughput.
• Light measurement and sensing systems used in process control environments for accurate monitoring of optical signals.
• High-speed data transmission equipment that relies on rapid photodetection to support communication protocols.
• Industrial instrumentation requiring compact, durable photodetectors capable of stable operation under varying temperature and mechanical stress.

QE4E050F01 Brand Info

This photodetector is manufactured by a leading company specializing in semiconductor components for industrial and communication applications. The QE4E050F01 represents the brand??s commitment to quality, precision, and reliability. Developed with advanced semiconductor fabrication techniques, the product meets stringent industry standards and supports integration into high-performance optical systems. The brand??s extensive support and global distribution network ensure availability and technical assistance for engineering and sourcing teams.

PREGUNTAS FRECUENTES

What is the main sensing wavelength of this photodetector?

The photodetector is optimized for peak sensitivity at 850 nm, making it suitable for infrared light detection commonly used in optical communication and sensing applications.

How does the low dark current benefit my application?

Low dark current reduces the background noise generated by the device when no light is present. This improves the accuracy and sensitivity of optical measurements, especially in low-light conditions.

What are the environmental conditions this device can withstand?

Encased in a TO-46 metal can package, the device offers excellent mechanical protection and thermal stability, suitable for industrial environments with fluctuating temperatures and mechanical stress.

Is this photodetector suitable for high-speed data communication?

Yes, the device features a rise time of less than 1 nanosecond, enabling