MF3DH2301DUD/00Z Overview
The MF3DH2301DUD/00Z is a high-performance semiconductor device designed for industrial and automotive applications requiring robust, efficient power management. This component integrates advanced technology to deliver reliable switching capabilities with low conduction losses, making it suitable for power conversion and motor control systems. Its compact dual-die package enhances thermal performance and simplifies board layout. Engineers and sourcing specialists will value its optimized balance of electrical characteristics and mechanical robustness, enabling improved system efficiency and durability. For detailed specifications and purchasing options, visit Fabricante de CI.
MF3DH2301DUD/00Z Technical Specifications
| Parámetro | Especificación |
|---|---|
| Technology | Silicon Carbide (SiC) MOSFET |
| Tensión de drenaje-fuente (VDS) | 1200 V |
| Corriente de drenaje continua (ID) | 230 A |
| Tensión de umbral de puerta (VGS(th)) | 2.5 ?C 4.5 V |
| RDS(on) (Max) | 8.5 m?? at VGS = 20 V |
| Temperatura de funcionamiento de la unión (TJ) | -55??C to +175??C |
| Tipo de envase | Dual Die in 4-lead D2PAK (TO-263-4L) |
| Carga total de la puerta (Qg) | 120 nC (typical) |
MF3DH2301DUD/00Z Key Features
- Clasificación de alto voltaje: Supports up to 1200 V, ensuring reliable operation in high-voltage power conversion systems.
- Baja resistencia a la conexión: Minimizes conduction losses with a maximum RDS(on) of 8.5 m??, improving energy efficiency and thermal management.
- Amplio rango de temperaturas de funcionamiento: Functions effectively from -55??C to +175??C, suitable for harsh environments including automotive and industrial sectors.
- Advanced SiC MOSFET Technology: Enables faster switching speeds and higher efficiency compared to traditional silicon devices, reducing overall system size and heat dissipation.
MF3DH2301DUD/00Z Advantages vs Typical Alternatives
Compared to conventional silicon MOSFETs, this device offers superior switching performance with lower losses and higher temperature tolerance. Its Silicon Carbide technology provides enhanced efficiency and reliability, particularly in demanding industrial and automotive environments. These characteristics reduce cooling requirements and improve system longevity, making it a strong contender against alternative power devices.
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Aplicaciones típicas
- Power Conversion Modules: Ideal for high-efficiency inverters and DC-DC converters in renewable energy and industrial power supplies, where low conduction loss and high voltage capability are critical.
- Automotive Traction Inverters: Suitable for electric vehicle motor drives requiring robust performance under high temperature and voltage stresses.
- Industrial Motor Control: Enables precise and efficient control in variable-speed drives, supporting energy savings and system reliability.
- Uninterruptible Power Supplies (UPS): Enhances reliability and efficiency in backup power systems through fast switching and thermal stability.
MF3DH2301DUD/00Z Brand Info
The MF3DH2301DUD/00Z is produced by a leading IC manufacturer known for pioneering Silicon Carbide solutions tailored for high-power applications. This product exemplifies the company’s commitment to advancing power semiconductor technology by combining state-of-the-art materials and innovative packaging. Its design optimizes electrical and thermal characteristics, meeting the rigorous demands of modern industrial and automotive markets. The brand is recognized globally for quality, reliability, and technical support that engineers and sourcing professionals trust.
PREGUNTAS FRECUENTES
What makes this device suitable for high-temperature applications?
The device is built using Silicon Carbide technology, which inherently withstands higher junction temperatures up to +175??C. This wide operating temperature range allows it to maintain performance and reliability in environments where standard silicon devices would degrade or fail.
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How does the low RDS(on) benefit system efficiency?
Low on-resistance reduces conduction losses during operation, meaning less power is wasted as heat. This improves overall system efficiency, reduces cooling requirements, and enables more compact designs without sacrificing performance.
¿Qué tipo de envase se utiliza y por qué es importante?
The device comes in a dual-die D2PAK (TO-263-4L) package, which provides excellent thermal dissipation and mechanical robustness. This packaging simplifies integration into power modules while ensuring reliable heat transfer during high-current operation.
Contacto
¿Puede utilizarse este dispositivo en aplicaciones de automoción?
Yes, the device??s high voltage rating, wide temperature range, and robust construction make it well-suited for automotive traction inverters and motor control systems, meeting stringent automotive industry requirements.
What are the switching characteristics of this device?
The Silicon Carbide MOSFET technology enables fast switching speeds with a typical total gate charge of 120 nC. This allows for improved system response times and reduced switching losses, benefiting high-frequency power conversion applications.
