JANSP2N3019S-Transistor NPN Amplifier Transistor in TO-18 Metal Can Package

JANSP2N3019S-Transistor Overview

The JANSP2N3019S is a high-performance NPN bipolar junction transistor designed for general-purpose amplification and switching applications. Engineered to deliver reliable operation under varying electrical conditions, this transistor supports moderate power dissipation and offers excellent gain characteristics. Its robust construction ensures consistent performance in industrial and commercial electronic circuits. Ideal for engineers and sourcing specialists seeking a durable, efficient component, the device is well-suited for applications requiring stable switching and amplification. For detailed technical support and product sourcing, visit Fabricante de CI.

JANSP2N3019S-Transistor Technical Specifications

Parámetro	Especificación
Tipo de transistor	Transistor de unión bipolar NPN
Tensión colector-emisor (VDIRECTOR GENERAL)	60 V
Corriente de colector (IC)	800 mA
Disipación de potencia (PD)	625 mW
Ganancia de corriente continua (hFE)	40 to 160 (varies by test conditions)
Frecuencia de transición (fT)	100 MHz
Tipo de envase	Lata metálica TO-18
Temperatura de funcionamiento de la unión	-65??C to +200??C

JANSP2N3019S-Transistor Key Features

• High voltage blocking capability: Supports up to 60 V collector-emitter voltage, enabling use in moderate voltage switching circuits and amplifiers.
• Manejo moderado de la corriente: Collector current rating of 800 mA allows for reliable operation in low to medium power applications.
• Amplia gama de temperaturas de funcionamiento: Rated for -65??C to +200??C, ensuring stable performance in harsh industrial environments.
• High transition frequency: 100 MHz frequency supports fast switching speeds, enhancing efficiency in high-frequency circuits.

Aplicaciones típicas

• Signal amplification in analog audio and RF circuits where moderate power and gain stability are required.
• Switching elements in power control circuits for industrial automation and instrumentation.
• Driver stages in relay and solenoid control applications benefiting from robust thermal and electrical characteristics.
• General-purpose transistor use in discrete component designs for industrial-grade electronic equipment.

JANSP2N3019S-Transistor Advantages vs Typical Alternatives

This transistor provides a balanced combination of voltage, current, and frequency performance that exceeds many generic alternatives. Its high operating temperature range and rugged TO-18 packaging enhance reliability in demanding environments. Compared to typical plastic-encapsulated devices, it offers superior thermal dissipation and mechanical stability, making it a preferred choice for industrial and high-reliability applications.

JANSP2N3019S-Transistor Brand Info

The JANSP2N3019S is a JEDEC-standard transistor commonly manufactured by multiple reputable semiconductor suppliers under strict quality controls. The “JAN” prefix denotes a militarized or industrial-grade device variant, adhering to stringent reliability and environmental standards. This transistor is widely recognized for consistent performance in aerospace, military, and industrial electronics sectors, reflecting the legacy of precision engineering and comprehensive testing associated with JAN-class components.

PREGUNTAS FRECUENTES

¿Cuál es la corriente de colector máxima de este transistor?

The maximum collector current is rated at 800 milliamperes (mA). This rating defines the upper limit of continuous current the transistor can safely handle without degradation or failure, suitable for moderate power applications.

Can this transistor operate at high temperatures?

Yes, it supports an operating junction temperature range from -65??C up to +200??C. This wide thermal range allows use in harsh environments, including industrial and military applications requiring thermal resilience.

What package type does the transistor come in?

The device is housed in a TO-18 metal can package. This metal enclosure provides excellent thermal conductivity and mechanical robustness compared to plastic packages, enhancing reliability and heat dissipation.

¿Este transistor es adecuado para aplicaciones de alta frecuencia?

With a transition frequency (fT) of 100 MHz, it supports relatively high-speed switching and amplification tasks. This makes it suitable for RF signal processing and fast switching circuits within moderate