JANSD2N5151L-Transistor Overview
The JANSD2N5151L is a high-voltage NPN bipolar junction transistor designed for switching and amplification in industrial and consumer electronic circuits. Featuring a collector-emitter voltage rating suitable for medium power applications, this transistor supports reliable operation in demanding environments. Its robust construction ensures stable performance with low saturation voltage and good current gain, making it well-suited for amplifier stages and switching power supplies. Engineered for efficiency and durability, the JANSD2N5151L provides consistent performance in both linear and switching modes. For more detailed product information and sourcing options, visit Fabricante de CI.
JANSD2N5151L-Transistor Technical Specifications
Parámetro | Especificación |
---|---|
Tipo | Transistor de unión bipolar NPN |
Tensión colector-emisor (VCE) | 100 V |
Corriente de colector (IC) | 1.5 A |
Disipación de potencia (Ptot) | 20 W |
Ganancia de corriente continua (hFE) | 40 to 320 (varies with collector current) |
Frecuencia de transición (fT) | 80 MHz (typical) |
Tipo de envase | TO-220 |
Temperatura de funcionamiento de la unión | -65??C to +150??C |
Tensión base del emisor (VBE(on)) | 1.5 V (typical) |
JANSD2N5151L-Transistor Key Features
- High voltage handling: Supports up to 100 V collector-emitter voltage, enabling use in medium power switching and amplification circuits.
- Capacidad de corriente robusta: 1.5 A maximum collector current supports reliable operation under moderate load conditions.
- Wide frequency response: Transition frequency up to 80 MHz allows use in high-speed switching applications.
- Thermal stability: Operating junction temperature up to 150??C ensures dependable performance in harsh environments.
- Standard TO-220 package: Facilitates easy mounting and heat dissipation for effective thermal management.
- Variable gain range: DC current gain from 40 to 320 allows design flexibility for different amplification requirements.
Aplicaciones típicas
- Power switching in industrial control circuits where medium voltage and current handling are required for reliable operation under load.
- Audio amplifier output stages, benefiting from the transistor??s high gain and linear characteristics.
- Motor driver circuits that need efficient switching and thermal stability in compact power modules.
- Voltage regulator circuits and power supply units requiring stable transistor performance at elevated temperatures.
JANSD2N5151L-Transistor Advantages vs Typical Alternatives
This transistor offers a balanced combination of high voltage rating and moderate current capacity, making it advantageous for applications that demand robust switching with thermal resilience. Compared to typical low-voltage transistors, it provides higher voltage tolerance, reducing stress in power circuits. Its frequency response and gain range allow efficient amplification and switching, which enhances circuit accuracy and reliability. Additionally, the TO-220 package supports effective heat dissipation, improving operational stability over prolonged use.
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JANSD2N5151L-Transistor Brand Info
The JANSD2N5151L is a transistor variant produced under the JAN (Joint Army-Navy) specification, indicating compliance with military-grade standards for durability and performance. This transistor is widely recognized for its ruggedness and suitability for industrial and aerospace applications where reliability is critical. The device aligns with established semiconductor manufacturing protocols, ensuring consistent quality and availability for engineers and sourcing professionals seeking dependable bipolar junction transistors for demanding designs.
PREGUNTAS FRECUENTES
¿Cuál es la corriente de colector máxima de este transistor?
The transistor supports a maximum collector current of 1.5 amperes, suitable for moderate power applications including switching and amplification tasks. Exceeding this current may cause device degradation or failure.
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Can this transistor operate at high temperatures?
Yes, it is rated for an operating junction temperature range from -65??C up to +150??C, making