JAN2N3763U4-Transistor Overview
The JAN2N3763U4 transistor is a high-voltage, high-power NPN bipolar junction transistor designed for robust switching and amplification applications. Engineered to handle collector-emitter voltages up to 100V and collector currents up to 10A, it offers reliable performance in demanding industrial environments. This device exhibits a high gain bandwidth product and low saturation voltage, enabling efficient operation in power regulation and motor control circuits. Its rugged construction and military-grade JAN (Joint Army-Navy) designation ensure enhanced reliability and quality assurance. For detailed technical support and procurement, visit Fabricante de CI.
JAN2N3763U4-Transistor Technical Specifications
| Parámetro | Especificación |
|---|---|
| Tipo de transistor | Transistor de unión bipolar NPN |
| Tensión colector-emisor (Vce) | 100 V |
| Tensión colector-base (Vcb) | 100 V |
| Tensión emisor-base (Veb) | 5 V |
| Corriente de colector (Ic) | 10 A (continuous) |
| Disipación de potencia (Pd) | 125 W (max) |
| Ganancia de corriente continua (hFE) | 30 to 70 (typical) |
| Frecuencia de transición (fT) | 3 MHz |
| Tipo de envase | Bote metálico TO-3 |
JAN2N3763U4-Transistor Key Features
- High Voltage and Current Handling: Supports up to 100V and 10A continuous current, enabling use in demanding power electronics and switching circuits.
- Robust Military-Grade Construction: JAN designation assures compliance with stringent military standards for reliability and quality.
- Baja tensión de saturación: Minimizes power loss during conduction, improving overall energy efficiency in power control applications.
- Wide Frequency Response: Transition frequency of 3 MHz supports moderate-speed switching and amplification tasks.
Aplicaciones típicas
- Power Amplification: Used in audio and RF power amplification stages requiring high current and voltage capabilities with stable gain.
- Motor Control: Suitable for DC motor speed control and drive circuits that demand reliable, high-current switching devices.
- Voltage Regulation: Employed in linear voltage regulators and switching regulators for industrial power supplies.
- Switching Circuits: Ideal for high-power switching in industrial automation and control systems.
JAN2N3763U4-Transistor Advantages vs Typical Alternatives
This transistor offers superior reliability and power handling compared to standard commercial equivalents, thanks to its military JAN rating. Its high collector current rating and voltage capability make it well-suited for demanding industrial applications. The low saturation voltage reduces conduction losses, enhancing efficiency. Compared to typical alternatives, it delivers consistent performance under harsh conditions with improved thermal and electrical stability.
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JAN2N3763U4-Transistor Brand Info
The JAN2N3763U4 transistor is a product typically associated with established semiconductor manufacturers who supply military-grade components. The JAN prefix denotes compliance with the Joint Army-Navy standards, ensuring ruggedness and reliability for defense and aerospace applications. This device is commonly sourced from trusted suppliers specializing in high-power discrete semiconductors, backed by rigorous testing and quality assurance processes tailored for high-reliability environments.
PREGUNTAS FRECUENTES
What does the JAN prefix in the transistor??s part number signify?
The JAN prefix indicates that the transistor meets Joint Army-Navy specifications, ensuring it has undergone stringent quality and reliability testing. These standards guarantee the device??s suitability for military and aerospace applications requiring enhanced durability and performance under extreme conditions.
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What is the maximum collector current this transistor can handle?
This transistor supports a maximum continuous collector current of 10 amperes. This makes it suitable for high-power switching and amplification applications where substantial current flow is necessary.
What packaging does the transistor use and why is it important?
The device is housed in a TO-3 metal can package, which provides excellent thermal conductivity and mechanical robustness. This packaging facilitates efficient heat dissipation, critical for maintaining device reliability in high-power applications.
Contacto
Can this transistor be used for RF amplification?
While the transistor has a transition frequency of approximately
