JAN2N3439P-Transistor-PIND Overview
The JAN2N3439P-Transistor-PIND is a high-performance bipolar junction transistor designed for military and aerospace applications demanding reliability, precision, and stability under harsh conditions. Featuring a PIND (Particle Impact Noise Detection) tested package, this transistor ensures enhanced ruggedness against mechanical shock and vibration. With robust electrical characteristics, it supports efficient switching and amplification in complex analog and digital circuits. Its design aligns with stringent JAN (Joint Army-Navy) standards, making it a dependable choice for engineers and sourcing specialists focused on secure supply and long-term operational integrity. For more information, visit Fabricante de CI.
JAN2N3439P-Transistor-PIND Key Features
- High gain performance: Enables efficient signal amplification with minimal distortion, supporting precise circuit operation.
- PIND tested packaging: Guarantees mechanical robustness by detecting and eliminating loose particles that could cause internal shorts, enhancing reliability.
- Amplio rango de tensión de funcionamiento: Provides flexibility for diverse circuit designs, accommodating both low and high voltage requirements effectively.
- Military-grade qualification: Ensures consistent performance under extreme temperature and environmental stress, critical for mission-critical systems.
JAN2N3439P-Transistor-PIND Technical Specifications
| Parámetro | Valor | Unidad |
|---|---|---|
| Tipo de transistor | NPN Bipolar Junction | – |
| Tensión colector-emisor (Vceo) | 120 | V |
| Corriente de colector (Ic) | 1 | A |
| Producto de ganancia de ancho de banda (fT) | 20 | MHz |
| Disipación de potencia (Pd) | 20 | W |
| Temperatura de funcionamiento | -65 a +200 | ??C |
| Packaging | Metal Can, PIND Tested | – |
| Figura de ruido | Bajo | dB |
| hFE (DC Current Gain) | De 40 a 160 | – |
JAN2N3439P-Transistor-PIND Advantages vs Typical Alternatives
This transistor offers superior mechanical reliability due to its PIND tested packaging, which is not common in standard transistors. It maintains stable gain and power handling over a wide temperature range, providing enhanced performance in demanding environments. Compared to typical commercial transistors, it delivers higher durability and consistent electrical characteristics, making it the preferred solution for military and aerospace electronic designs requiring longevity and precision.
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Aplicaciones típicas
- Military and aerospace communication systems requiring high reliability under extreme temperature and mechanical stress conditions, ensuring signal integrity and device longevity.
- Precision analog amplification circuits where stable gain and low noise are critical for accurate signal processing.
- Power switching in ruggedized electronic assemblies benefiting from the device??s high collector current and voltage ratings.
- Environmental monitoring equipment in harsh settings, leveraging the transistor??s robust packaging and temperature tolerance.
JAN2N3439P-Transistor-PIND Brand Info
The JAN2N3439P-Transistor-PIND is produced under strict military specifications (JAN), guaranteeing superior quality and reliability. The brand behind this transistor emphasizes ruggedized semiconductor components tailored for defense and aerospace industries. Each unit undergoes rigorous testing, including PIND to detect internal particle contamination, ensuring fault-free operation in critical applications. This product represents the brand??s commitment to delivering durable, high-performance transistors for engineers who demand uncompromised standards in industrial technology.
PREGUNTAS FRECUENTES
What does PIND testing mean for this transistor?
PIND (Particle Impact Noise Detection) testing is a quality assurance process that detects loose particles inside the transistor package. This test improves reliability by preventing internal shorts or failures caused by contamination, ensuring the device performs consistently in demanding environments.
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What are the typical operating temperature limits for this transistor?
The transistor is rated for operation between -65??C and +200??C, supporting applications that involve extreme temperature variations commonly found in military and aerospace settings.
How does the collector current rating affect circuit design?
The maximum collector current of 1A allows the transistor to handle moderate power loads, making it suitable for switching and amplification tasks in both low and medium power circuits without compromising reliability.
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Why is military-grade qualification important for this device?
Military-grade qualification ensures the transistor meets stringent performance and durability standards required in defense and aerospace applications. This guarantees operation under shock, vibration, temperature extremes, and other harsh conditions.
Can this transistor be used in commercial electronics?
While designed primarily for military and aerospace use, the transistor??s robust features and reliable specifications can benefit commercial electronics requiring high durability and stable performance in challenging environments.
