IPB027N10N3GATMA1 N-Channel MOSFET, 100V 180A, TO-263 Package

  • Designed for switching and power management, enabling efficient control in electronic circuits.
  • Low RDS(on) specification allows for reduced conduction losses, improving overall system energy efficiency.
  • Features a compact TO-220 package, saving board space and simplifying thermal management.
  • Ideal for use in motor drives, providing reliable performance in demanding industrial applications.
  • Manufactured to high-quality standards, supporting consistent operation in long-term deployments.
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IPB027N10N3GATMA1 Overview

The IPB027N10N3GATMA1 is a high-performance N-channel MOSFET designed for demanding industrial and power management applications. Featuring an optimized combination of low on-resistance and robust voltage handling, this device is engineered for use in high-efficiency switching circuits, motor drives, and power conversion systems. Its advanced MOSFET technology ensures reliable switching performance, reduced conduction losses, and excellent thermal characteristics. By delivering consistent performance under rigorous operating conditions, the IPB027N10N3GATMA1 offers a compelling solution for engineers seeking efficiency, reliability, and scalability. For more details, visit Fabricante de CI.

IPB027N10N3GATMA1 Technical Specifications

Parámetro Valor
Tipo de transistor N-Channel MOSFET
Tensión de drenaje-fuente (VDS) 100 V
Corriente de drenaje continua (ID) 120 A
RDS(on) (Max) 2.7 m??
Carga de puerta (Qg) 168 nC
Paquete TO-263-3 (D2PAK)
Temperatura de funcionamiento -55??C to +175??C
Tipo de montaje Montaje en superficie
Polarity N-Channel

IPB027N10N3GATMA1 Key Features

  • Ultra-low RDS(on) of 2.7 m?? minimizes conduction losses, enabling higher system efficiency in switching and power conversion circuits.
  • High drain current capability (up to 120 A) supports robust handling of large power loads, critical for industrial and automotive applications.
  • Wide operating temperature range from -55??C to +175??C ensures reliable operation in harsh environments and demanding thermal conditions.
  • Industry-standard TO-263-3 (D2PAK) package provides ease of integration in surface mount designs, optimizing board layout and heat dissipation.

IPB027N10N3GATMA1 Advantages vs Typical Alternatives

Compared to standard N-channel MOSFETs, this device stands out with its ultra-low on-resistance and high current handling, delivering superior efficiency and reduced thermal stress. Its advanced packaging and wide temperature tolerance further enhance system reliability and simplify integration in space-constrained or thermally demanding designs, making it a preferred choice for power management and industrial switching tasks.

Aplicaciones típicas

  • Switching power supplies: Suitable for use in high-efficiency DC-DC converters, server power modules, and telecom rectifiers, where low conduction losses and reliable switching are essential.
  • Motor control circuits: Ideal for three-phase motor drives, industrial automation, and electric vehicle inverter systems, supporting high current and fast response.
  • Battery protection and management: Ensures safe and efficient charge/discharge cycles in energy storage systems, uninterruptible power supplies, and battery backup units.
  • Load switching: Used in industrial load switches, relay replacements, and high-side or low-side switching applications requiring robust voltage and current capability.

IPB027N10N3GATMA1 Brand Info

The IPB027N10N3GATMA1 is distinguished within its product family for its balance of low on-resistance, high current capability, and robust package design. Manufactured to meet stringent industry standards, it is engineered for reliability and performance in high-stress environments. This product is part of a portfolio renowned for consistent quality, making it a dependable choice for engineers and system designers requiring proven MOSFET technology in power and industrial applications.

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What sets the IPB027N10N3GATMA1 apart in high-current applications?

Its combination of a low RDS(on) (2.7 m??) and high drain current (up to 120 A) enables efficient handling of large loads with minimal power loss and heat generation, making it particularly suitable for demanding industrial and automotive uses.

How does its package benefit thermal management?

The TO-263-3 (D2PAK) surface-mount package is designed for optimal heat dissipation, supporting reliable operation at high currents and elevated temperatures. This allows for more compact board layouts without sacrificing performance or reliability.

Can this MOSFET be used in harsh environments?

Yes. With an operating temperature range from -55??C to +175??C, the device is built to maintain stable electrical characteristics and reliability in both very cold and very hot operating conditions, making it ideal for industrial and automotive systems.

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What types of circuits benefit most from this device?

Switching power supplies, motor drives, and battery management systems all benefit from its high efficiency, fast switching, and robust current handling. Its characteristics support improved energy savings and operational reliability in these applications.

Is the IPB027N10N3GATMA1 suitable for surface mount manufacturing processes?

Absolutely. Its TO-263-3 (D2PAK) package is standardized for automated surface mount assembly, making it compatible with modern PCB manufacturing and reflow soldering processes, thus streamlining integration into a wide range of electronic designs.

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