IGB03N120S7ATMA1 1200V IGBT Transistor, TO-247 Package, Power Switching Module

  • Designed for efficient switching and control in power electronics, helping to reduce energy loss in high-voltage applications.
  • Features a TO-247 package, allowing for easier heat dissipation and straightforward integration onto standard PCBs.
  • Compact package design saves valuable board space in dense power modules or inverter circuits.
  • Commonly used in motor drives or industrial power supplies to enable fast, reliable switching performance.
  • Manufactured to strict quality standards, minimizing failure risk in demanding operating environments.
SKU: IGB03N120S7ATMA1 Categoría: Marca:
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产品上方询盘

IGB03N120S7ATMA1 Overview

The IGB03N120S7ATMA1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) engineered for demanding industrial and power electronic environments. This device is optimized for efficient switching and robust operation, combining low conduction losses with high blocking voltage. Its advanced construction supports reliable performance in applications such as inverters, power supplies, and motor drives. The product is carefully designed to meet stringent requirements for power density, thermal stability, and operational efficiency. For sourcing and detailed manufacturer information, visit Fabricante de CI.

IGB03N120S7ATMA1 Technical Specifications

Parámetro Valor
Tipo IGBT (Insulated Gate Bipolar Transistor)
Tensión colector-emisor (VCES) 1200 V
Corriente de colector (IC) 30 A
Configuration Single Transistor
Paquete TO-247-3
Tipo de montaje Through Hole
Polarity N-Channel
Series IGBT S7

IGB03N120S7ATMA1 Key Features

  • High 1200 V collector-emitter voltage enables robust operation in high-voltage circuits, supporting demanding industrial and power conversion environments.
  • 30 A collector current capacity ensures compatibility with applications requiring substantial load handling, improving system scalability and utility.
  • TO-247-3 package with through-hole mounting provides mechanical durability and excellent thermal dissipation, promoting long-term reliability.
  • Optimized N-channel structure supports efficient switching with reduced conduction losses, enhancing energy efficiency in continuous duty cycles.

IGB03N120S7ATMA1 Advantages vs Typical Alternatives

This device offers a compelling blend of high voltage tolerance and significant current handling, making it advantageous for industrial systems requiring consistent, reliable switching. Its efficient design helps lower conduction losses, boosting energy efficiency versus conventional IGBT alternatives. The robust package and configuration further enhance reliability and integration, supporting critical power conversion tasks with dependable, thermally stable operation.

Aplicaciones típicas

  • Motor drives and industrial inverters: The device??s high voltage and current capabilities make it suitable for driving large motors and managing phase control in robust inverter systems, ensuring reliable operation under variable loads.
  • Uninterruptible power supplies (UPS): Its ability to handle significant power switching loads is beneficial in UPS designs, providing stability during grid fluctuations or outages.
  • Switch-mode power supplies (SMPS): The low conduction losses and efficient switching characteristics are ideal for high-frequency, high-efficiency switch-mode supplies in industrial and commercial equipment.
  • Renewable energy converters: Used in solar and wind power electronics, the product supports efficient DC-AC and DC-DC conversion, contributing to improved energy harvesting and conversion performance.

IGB03N120S7ATMA1 Brand Info

The IGB03N120S7ATMA1 is part of the advanced S7 series of IGBT devices, which are recognized for their balance of high voltage endurance and current handling. Designed for engineers requiring reliable, high-performance switching components, this product delivers consistent results in power electronics. Its robust engineering and compatibility with standard TO-247-3 packaging make it a trusted choice for industrial and power conversion applications.

PREGUNTAS FRECUENTES

What packaging does the IGB03N120S7ATMA1 use and why is it important?

This device is supplied in a TO-247-3 package, a standard through-hole format known for its excellent thermal management and mechanical robustness. This ensures easy integration into power electronics assemblies and supports effective heat dissipation during high-current operation.

Is the IGB03N120S7ATMA1 suitable for high-voltage applications?

Yes, with a collector-emitter voltage rating of 1200 V, this IGBT is well-suited for circuits that require high voltage tolerance. This makes it a strong choice for industrial drives, inverters, and power conversion systems that operate at elevated voltages.

How does the current rating of the IGB03N120S7ATMA1 affect its application range?

The 30 A collector current capability allows this transistor to be used in applications demanding substantial load handling, such as motor controls and UPS systems. Its current rating provides flexibility for designers targeting mid- to high-power applications.

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产品中间询盘

What are the primary benefits of the S7 series configuration in this product?

The S7 series is optimized for efficient switching and reliability, combining a robust N-channel design with minimized conduction losses. This results in improved efficiency and long-term stability, key for demanding industrial and renewable energy systems.

Can it be used in energy conversion and renewable energy systems?

Absolutely. Its efficient switching and high voltage/current ratings make it ideal for DC-AC and DC-DC converters in solar and wind power applications, supporting reliable energy management and conversion in modern renewable systems.

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