DTC123YE-TP Toshiba Transistor Array IC – 16-Pin DIP Package

DTC123YE-TP Overview

The DTC123YE-TP is a high-performance discrete transistor designed for efficient switching and amplification in industrial and consumer electronic circuits. Featuring a robust thermal profile and optimized gain characteristics, this transistor supports reliable operation in demanding environments. Its complementary design enables seamless integration in driver stages, signal processing, and power management applications. Engineers and sourcing specialists benefit from its consistent quality and compact package, making it an ideal choice for high-density PCB layouts. For detailed product information and purchasing options, visit Fabricante de CI.

DTC123YE-TP Technical Specifications

Parámetro	Especificación
Tipo	Transistor de unión bipolar NPN
Tensión colector-emisor (VDIRECTOR GENERAL)	40 V
Corriente de colector (IC)	600 mA
Producto de ganancia de ancho de banda (fT)	100 MHz
Disipación de potencia (Ptot)	500 mW
Ganancia de corriente continua (hFE)	De 100 a 300
Tipo de envase	TO-92 Plastic Package
Temperatura de funcionamiento	De -55 °C a +150 °C
Frecuencia de transición	100 MHz

DTC123YE-TP Key Features

• Manejo de altas corrientes: Supports up to 600 mA collector current, ensuring robust performance in medium-power switching applications.
• Amplio rango de tensión: With a collector-emitter voltage rating of 40 V, it offers flexibility for various circuit designs requiring moderate voltage handling capability.
• Excellent Gain Characteristics: DC current gain ranges from 100 to 300, allowing for effective amplification and stable operation across temperature variations.
• Compact TO-92 Package: Facilitates ease of use in tight PCB spaces and supports automated assembly processes.
• High Transition Frequency: Operating at 100 MHz transition frequency makes it suitable for fast switching and high-frequency applications.
• Wide Operating Temperature: Ensures reliable function from -55??C to +150??C, supporting demanding industrial environments.
• Baja disipación de energía: 500 mW maximum power dissipation enables efficient thermal management.

Aplicaciones típicas

• Switching and amplification in industrial control circuits, where reliable medium-power transistor operation is essential for signal integrity and system stability.
• Driver stages for relays and low-power motors requiring efficient current switching with minimal losses.
• Audio preamplifiers and small-signal amplification in consumer electronics, benefiting from stable gain and low noise characteristics.
• General-purpose switching in power management circuits, including voltage regulation and signal interfacing in embedded systems.

DTC123YE-TP Advantages vs Typical Alternatives

This transistor offers a balanced combination of voltage tolerance, current capacity, and gain that often surpasses typical alternatives in similar TO-92 packages. Its extended operating temperature range and reliable switching frequency provide enhanced durability and performance in industrial applications. The compact form factor and consistent electrical characteristics ensure straightforward integration and dependable operation, making it a preferred choice for engineers seeking efficient, cost-effective transistor solutions.

DTC123YE-TP Brand Info

The DTC123YE-TP is manufactured by Diodes Incorporated, a global semiconductor leader known for high-quality discrete, logic, and analog devices. This product line reflects the company??s commitment to delivering reliable components tailored for robust industrial and consumer applications. Diodes Incorporated emphasizes efficiency and thermal performance, ensuring that the transistor meets stringent industry standards. The DTC123YE-TP benefits from the brand’s extensive experience in transistor technology, offering proven durability and consistent performance across a variety of demanding environments.

PREGUNTAS FRECUENTES

What is the maximum collector current rating for the DTC123YE-TP?

The transistor supports a maximum continuous collector current of 600 mA, making it suitable for medium-power switching and amplification tasks within its specified thermal limits.

What is the voltage rating of this transistor, and how does it affect its application?

It has a collector-emitter voltage rating of 40