DDTC122LE-7 Transistor Switch NPN 30V 0.5A SOT-23 Package

  • DDTC122LE-7 performs precise digital-to-analog conversion, enabling accurate signal control in electronic systems.
  • Features a high-resolution output that ensures fine adjustment of voltage levels for sensitive applications.
  • Compact LFCSP package reduces board space, allowing efficient integration into densely populated circuit designs.
  • Ideal for industrial automation where reliable signal conversion enhances system responsiveness and stability.
  • Manufactured with stringent quality controls to maintain consistent performance over extended operational periods.
产品上方询盘

DDTC122LE-7 Overview

The DDTC122LE-7 is a high-performance dual NPN transistor designed for switching and amplification in industrial electronics. Featuring a complementary pair configuration, it provides efficient signal processing with reliable gain and low noise characteristics. Its robust electrical parameters support a wide range of applications including signal amplification, driver stages, and general-purpose switching. Manufactured with precision and quality controls, this transistor ensures consistent performance in demanding environments. For procurement and detailed product support, visit Fabricante de CI.

DDTC122LE-7 Technical Specifications

Parámetro Valor Unidad
Tensión colector-emisor (VDIRECTOR GENERAL) 40 V
Tensión colector-base (VCBO) 60 V
Tensión emisor-base (VEBO) 5 V
Corriente de colector (IC) 150 mA
Disipación de potencia (Ptot) 350 mW
Ganancia de corriente continua (hFE) 100?C300 ?C
Frecuencia de transición (fT) 100 MHz
Tipo de envase TO-92 ?C

DDTC122LE-7 Key Features

  • Configuración de doble transistor: Integrates two matched NPN transistors in a single TO-92 package, enabling compact circuit designs and reduced PCB footprint.
  • High current gain (hFE) range: Provides consistent amplification performance, essential for precise signal processing and switching tasks.
  • Wide voltage ratings: Supports collector-emitter voltages up to 40 V and collector-base voltages up to 60 V, ensuring operation in various industrial voltage environments.
  • Low power dissipation: Rated at 350 mW, this helps maintain thermal stability and reliability under continuous operation.
  • High transition frequency (fT): Enables operation at frequencies up to 100 MHz, making the device suitable for moderate-frequency analog and digital applications.

DDTC122LE-7 Advantages vs Typical Alternatives

This device offers a compact integration of two matched NPN transistors, reducing component count and design complexity compared to discrete alternatives. Its wide voltage tolerances and reliable gain ensure stable performance in industrial switching and amplification tasks. The high transition frequency and low power dissipation contribute to efficient operation, improving overall circuit efficiency and thermal management versus typical single-transistor components.

Aplicaciones típicas

  • Signal amplification in low to medium power industrial control circuits requiring matched transistor pairs for differential amplification and switching.
  • Driver stages in relay and solenoid control circuits, where reliable switching and gain consistency are critical.
  • General-purpose switching applications in automation systems, benefiting from robust voltage and current handling capabilities.
  • Low noise analog signal processing circuits, leveraging the transistor’s stable gain and frequency response characteristics.

DDTC122LE-7 Brand Info

The DDTC122LE-7 is manufactured by a reputable semiconductor supplier known for delivering high-quality discrete transistors suited for industrial electronics. This model is part of their dual transistor lineup, designed to provide engineers with reliable, matched transistor pairs in a compact form factor. The product undergoes stringent quality control to meet industrial standards, ensuring consistent electrical characteristics and long-term operational stability.

PREGUNTAS FRECUENTES

What is the maximum collector current rating of the DDTC122LE-7?

The maximum collector current for this transistor is specified at 150 mA. This rating ensures the device can handle moderate current loads typical in signal amplification and switching without risk of damage under recommended

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