DDTA144ECAQ-13-F RF Power Amplifier Module | Surface Mount (SMD) Package

DDTA144ECAQ-13-F Overview

The DDTA144ECAQ-13-F is a high-performance RF transistor designed for industrial and commercial applications requiring efficient amplification in the 1.4 GHz to 1.5 GHz frequency range. Its rugged construction and optimized gain characteristics make it suitable for use in communication systems, radar, and other RF front-end modules. The device offers excellent linearity and power efficiency, supporting reliable operation under demanding conditions. Sourced from a trusted supplier, this transistor integrates seamlessly into complex RF designs, ensuring consistent performance and long-term durability. For detailed product support and sourcing, visit Fabricante de CI.

DDTA144ECAQ-13-F Technical Specifications

Parámetro	Especificación
Gama de frecuencias	1.4 ?C 1.5 GHz
Gain (Typical)	13 dB
Output Power (P1dB)	14 W
Power Gain at P1dB	11 dB
Tensión de alimentación (Vcc)	28 V
Corriente de colector (Ic)	1.3 A
Efficiency (Typical at P1dB)	45%
Tipo de envase	Flanged Ceramic Package
Temperatura de funcionamiento	De -40 °C a +85 °C

DDTA144ECAQ-13-F Key Features

• High Power Output: Delivers up to 14 W output power at 1.4?C1.5 GHz, enabling robust signal amplification for demanding RF applications.
• Wide Frequency Range: Operates effectively across the 1.4 to 1.5 GHz band, providing design flexibility for various communication and radar systems.
• Efficient Power Operation: Typical efficiency of 45% enhances energy utilization, reducing heat dissipation and improving system reliability.
• Robust Ceramic Package: The flanged ceramic package ensures excellent thermal management and mechanical stability for harsh environments.

DDTA144ECAQ-13-F Advantages vs Typical Alternatives

This transistor offers superior power gain and efficiency at the targeted frequency range compared to standard RF transistors. Its rugged ceramic package provides enhanced thermal performance and reliability under harsh conditions, making it a preferred choice for high-demand industrial and communication applications. The combination of high output power and good linearity supports accurate signal amplification, which is critical for system integrity.

Aplicaciones típicas

• Communication Infrastructure: Ideal for base station amplifiers and RF front-end modules operating in the 1.4?C1.5 GHz frequency band where consistent gain and power output are essential.
• Radar Systems: Suitable for medium-power radar transmitters requiring efficient RF amplification with stable performance in variable environments.
• Industrial RF Equipment: Enables reliable signal boosting in industrial wireless systems, enhancing coverage and data transmission reliability.
• Test and Measurement Instruments: Used in signal generators and other RF test equipment that demand precise power amplification at L-band frequencies.

DDTA144ECAQ-13-F Brand Info

The DDTA144ECAQ-13-F is manufactured by a leading semiconductor provider specializing in RF power transistors for industrial and communication markets. The product line is known for its robust design, high efficiency, and reliability under diverse operating conditions. This device exemplifies the brand??s commitment to delivering components that meet stringent performance criteria and support advanced RF system designs.

PREGUNTAS FRECUENTES

What frequency range does the DDTA144ECAQ-13-F support?

The device is optimized for operation between 1.4 GHz and 1.5 GHz, covering a key portion of the L-band spectrum commonly used in communication and radar applications.

What is the typical output power capability of this transistor?

It delivers a typical output power of 14 watts at the 1 dB compression point, making it suitable for medium-power RF amplification tasks.

How efficient is the DDTA144ECAQ-13-F during operation?

The transistor achieves approximately 45% efficiency at its rated output power, which helps minimize heat generation and improves overall system energy management.

What type of package does this RF transistor use?