CY7C106B-25VC 1M x 8 CMOS Static RAM IC, 28-Pin DIP Package

CY7C106B-25VC Overview

The CY7C106B-25VC is a high-performance 16K x 8-bit static RAM (SRAM) designed for fast and reliable data storage in embedded systems and industrial applications. Featuring a 25ns access time, it supports efficient memory access with low latency, ideal for applications requiring quick read/write cycles. This device operates with a single 5V power supply and incorporates a three-state output buffer, enabling easy system integration and bus sharing. With robust electrical characteristics and a versatile 28-pin DIP package, it offers dependable operation across a range of environments. For detailed technical data and sourcing, visit Fabricante de CI.

CY7C106B-25VC Technical Specifications

Parámetro	Especificación
Organización de la memoria	16K x 8 bits
Tiempo de acceso	25 ns
Tensión de funcionamiento (Vcc)	5 V ?? 10%
Tipo de envase	28-pin DIP
Tensión de conservación de los datos	2 V (typical)
Temperatura de funcionamiento	0??C to +70??C
Power Consumption (Active)	40 mA (típico)
Standby Power	10 mA (típico)
Tipo de salida	Three-state TTL compatible
Input Levels	Compatible con TTL

CY7C106B-25VC Key Features

• Fast access time of 25 ns: Enables rapid data retrieval and storage, improving system throughput in time-critical applications.
• Single 5V power supply operation: Simplifies power design and reduces system complexity, making integration straightforward.
• Three-state output buffer: Allows direct connection to a shared bus, facilitating flexible memory expansion and system scalability.
• TTL compatible inputs and outputs: Ensures compatibility with standard digital logic families for seamless system interfacing.
• Low standby power consumption: Helps reduce overall power usage during idle periods, enhancing energy efficiency.
• Robust 28-pin DIP packaging: Provides mechanical reliability and ease of handling during manufacturing and prototyping.

CY7C106B-25VC Advantages vs Typical Alternatives

This SRAM device offers a competitive advantage with its fast 25 ns access time and low active power consumption compared to typical memory solutions. Its three-state output design enhances integration flexibility, allowing multiple devices on a common data bus without interference. The single 5V power supply operation aligns with standard digital logic levels, improving compatibility and simplifying system design. These factors collectively make it a reliable and efficient choice for embedded memory applications.

Aplicaciones típicas

• Embedded systems requiring fast, non-volatile data storage and retrieval, such as microcontroller-based control units or industrial automation modules.
• High-speed cache memory for processors or digital signal processing (DSP) systems where low latency is critical.
• Buffer memory for data acquisition systems to temporarily store sensor outputs before processing.
• General-purpose static RAM use in communications equipment, test instruments, and other digital electronic devices requiring rapid access.

CY7C106B-25VC Brand Info

The CY7C106B-25VC is part of a well-established family of static RAM products renowned for their performance and reliability in industrial and embedded markets. Manufactured with stringent quality standards, this device delivers consistent operation and long-term stability. Its design emphasizes ease of use, making it a preferred choice for engineers seeking dependable memory solutions with straightforward integration and proven electrical characteristics.

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What is the primary function of the CY7C106B-25VC SRAM?

The device functions as a static RAM with a 16K x 8-bit organization, providing fast, volatile storage for digital data. It supports quick read/write cycles with an access time of 25 ns, ideal for applications requiring temporary data buffering or caching.

Can the device operate with different voltage levels?

This SRAM is designed to operate with a single 5 V ?? 10% power supply. It does not support lower voltage operation modes, so system design must ensure stable 5 V