BSC600N25NS3GATMA1 N-Channel MOSFET, 600V 25A, TO-263 Package

BSC600N25NS3GATMA1 Overview

The BSC600N25NS3GATMA1 is a high-performance N-channel MOSFET designed for demanding power management and switching applications. With its low on-resistance and robust voltage handling, this device delivers efficient energy transfer and reliable performance in industrial and commercial electronic systems. Its compact SuperSO8 package optimizes board space while enabling high current operation. This MOSFET is well-suited for engineers seeking precise control, increased efficiency, and reliable switching in power conversion circuits. For more technical resources and procurement, visit Fabricante de CI.

BSC600N25NS3GATMA1 Technical Specifications

Parámetro	Valor
Tipo de transistor	N-Channel MOSFET
Tensión de drenaje-fuente (VDS)	250 V
Corriente de drenaje continua (ID)	45 A
On-State Resistance (RDS(ON))	0.060 ??
Tensión de umbral de puerta (VGS(th))	2 V ÿ 4 V
Paquete	SuperSO8
Disipación de potencia (PD)	83 W
Temperatura de funcionamiento	De -55 °C a +150 °C

BSC600N25NS3GATMA1 Key Features

• Low on-resistance minimizes conduction losses, enhancing energy efficiency in high-current circuits.
• High drain-source voltage rating (250 V) supports robust operation in industrial power supplies and converters.
• Compact SuperSO8 package allows high power density and efficient thermal management for board-level designs.
• Wide operating temperature range ensures reliable performance in harsh environments and demanding applications.

BSC600N25NS3GATMA1 Advantages vs Typical Alternatives

Compared to conventional MOSFETs, this device delivers lower on-resistance and higher current capacity in a compact footprint, resulting in better switching efficiency and reduced thermal stress. Its robust voltage tolerance and efficient power handling make it a superior choice for engineers requiring reliability, precise control, and straightforward integration in power management designs.

Aplicaciones típicas

• Switch-mode power supplies (SMPS): Enables efficient energy conversion and precise switching operations in both AC-DC and DC-DC converter designs, commonly used in industrial automation and telecommunications.
• Motor control circuits: Suitable for driving and protecting motors in industrial equipment, HVAC systems, and robotics, where high current handling is critical.
• Battery management systems: Provides reliable switching and protection functions in battery-powered devices and uninterruptible power supplies.
• Inverter circuits: Supports efficient operation in solar inverters and other renewable energy systems requiring robust and fast switching devices.

BSC600N25NS3GATMA1 Brand Info

This MOSFET is manufactured by a leading supplier of advanced power semiconductors, known for delivering reliability and performance in industrial and commercial markets. The device exemplifies the brand??s commitment to innovation, combining proven N-channel MOSFET technology with a compact, thermally efficient SuperSO8 package. The BSC600N25NS3GATMA1 is part of a product portfolio designed to meet the evolving needs of power conversion, motor control, and energy management applications.

PREGUNTAS FRECUENTES

¿Cuál es la tensión nominal máxima de drenaje-fuente de este MOSFET?

The maximum drain-source voltage rating is 250 V, which allows it to be used in high-voltage switching applications, providing flexibility for various industrial and commercial designs requiring robust voltage handling.

What are the key benefits of the SuperSO8 package?

The SuperSO8 package offers a compact form factor while supporting high current operation. Its design facilitates efficient heat dissipation, enabling reliable operation under demanding power loads and optimizing overall system performance.

Can this device be used in high-temperature environments?

Yes, it has an operating temperature range of -55??C to +150??C, making it suitable for harsh and thermally challenging environments. This broad range ensures stable performance in both industrial and outdoor applications.

How does the low on-resistance improve system efficiency?

A low R_DS(ON) of 0.060 ?? significantly reduces conduction losses during switching, resulting in lower power dissipation, improved energy efficiency, and reduced heat generation. This is especially valuable in high-current power management circuits.

What types of applications benefit most from this MOSFET?

The device is ideal for use in switch-mode power supplies, motor drives, battery management systems, and inverter circuits, where efficient switching, high current capacity, and reliable thermal performance are essential.