BSC028N06LS3GATMA1 N-Channel MOSFET, 60V 80A, OptiMOS S3, TO-263 Package

  • Acts as an N-channel MOSFET, allowing efficient switching and amplification in power management circuits.
  • Features a low on-resistance, minimizing power loss and heat generation during operation for better energy efficiency.
  • Housed in a SuperSO8 package, offering a compact footprint and saving valuable PCB space in dense designs.
  • Commonly used in DC-DC converters, helping regulate voltage with minimal energy waste in electronic devices.
  • Manufactured to support consistent performance and long-term reliability in demanding electronic environments.
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BSC028N06LS3GATMA1 Overview

The BSC028N06LS3GATMA1 is a high-performance N-channel MOSFET optimized for modern power management and switching applications. Designed for efficiency and low on-resistance, this component is well-suited for use in demanding environments where reliability and thermal management are critical. With its advanced packaging and robust electrical characteristics, the device ensures consistent operation in a wide range of industrial and commercial systems. For sourcing and technical details, visit Fabricante de CI.

BSC028N06LS3GATMA1 Technical Specifications

Attribute Especificación
Tipo de transistor N-Channel MOSFET
Drain-Source Voltage (Vds) 60 V
Corriente de drenaje continua (Id) 120 A
Rds(on) (Max) 2.8 m??
Carga de puerta (Qg) 61 nC
Disipación de potencia (Pd) 150 W
Package / Case TO-263-3 (D2PAK)
Temperatura de funcionamiento -55??C to +175??C
Tipo de montaje Montaje en superficie

BSC028N06LS3GATMA1 Key Features

  • Ultra-low Rds(on) of 2.8 m?? maximizes energy efficiency and reduces conduction losses, enabling lower heat generation in high-current applications.
  • High current handling capability up to 120 A supports robust design for motor drives, power supplies, and battery management systems, ensuring stable operation under heavy loads.
  • Wide operating temperature range from -55??C to +175??C guarantees reliable performance in harsh environments and industrial-grade systems.
  • TO-263-3 (D2PAK) surface-mount package allows for compact PCB layouts and efficient thermal dissipation, streamlining integration into modern designs.

BSC028N06LS3GATMA1 Advantages vs Typical Alternatives

The BSC028N06LS3GATMA1 stands out due to its combination of low on-resistance and high current capability, which leads to improved power efficiency and reduced thermal stress compared to standard MOSFETs. The robust packaging and broad temperature tolerance further enhance reliability, making it a superior choice for demanding power switching applications where consistent performance is critical.

Aplicaciones típicas

  • Power supply switching: This MOSFET is ideal for synchronous rectifiers and primary-side switches in high-efficiency power supply units, supporting lower losses and higher current throughput.
  • Motor control: Used in industrial and automotive motor drivers, it ensures efficient operation and withstands high inrush currents with minimal heat buildup.
  • Battery protection circuits: Its low Rds(on) and high current rating make it suitable for battery management systems requiring reliable switching and protection.
  • DC-DC converters: Frequently implemented in buck or boost converter circuits, where fast switching and low losses are essential for compact and efficient power regulation.

BSC028N06LS3GATMA1 Brand Info

The BSC028N06LS3GATMA1 is produced by a leading semiconductor manufacturer known for advanced power MOSFETs tailored to industrial and commercial needs. This device exemplifies a commitment to delivering components with low conduction losses, high reliability, and robust mechanical design. The product??s attributes ensure it meets the stringent requirements of today??s power electronics markets, making it a preferred solution for engineers seeking consistency and performance in their designs.

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What makes the BSC028N06LS3GATMA1 suitable for high-current applications?

Its low Rds(on) of 2.8 m?? and maximum continuous drain current of 120 A allow the device to handle substantial power loads efficiently. This reduces energy loss and heat, making it ideal for power-intensive systems like motor drives or high-efficiency power supplies.

Is the device suitable for use in harsh environments?

Yes, it operates reliably across a wide temperature range from -55??C to +175??C. The robust surface-mount TO-263-3 package further enhances durability and supports usage in industrial and automotive environments where temperature extremes are common.

How does the packaging benefit PCB design and thermal management?

The TO-263-3 (D2PAK) package is optimized for surface mounting, saving space and facilitating efficient thermal dissipation. This enables designers to create compact layouts while maintaining effective heat management, which is crucial for high-power circuits.

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What type of circuit topologies benefit most from this MOSFET?

It excels in synchronous rectification, DC-DC conversion, and battery protection circuits. Its fast switching and low on-resistance are especially advantageous in topologies where efficiency and thermal control are priorities.

What is the main advantage over standard MOSFETs?

The main advantage lies in its ultra-low on-resistance and high current handling, which together minimize losses and improve system reliability. This makes it a superior option for applications that demand both efficiency and robust performance under stress.

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