BCR142WH6327XTSA1 Overview
The BCR142WH6327XTSA1 is a highly reliable phototransistor designed for precise optical sensing applications. Engineered for consistent performance, it offers fast switching and stable responsivity, making it suitable for industrial automation and electronic control systems. This device provides excellent spectral sensitivity and low dark current, which ensures accurate detection even in low-light environments. Compact and robust, the phototransistor is optimized for integration into compact circuits requiring dependable light detection. For detailed technical support and sourcing, visit Fabricante de CI.
BCR142WH6327XTSA1 Technical Specifications
| Parámetro | Especificación |
|---|---|
| Tipo de fototransistor | Silicon NPN |
| Tipo de envase | Transparent Molded Plastic |
| Peak Spectral Sensitivity Wavelength | 940 nm |
| Tensión colector-emisor (VCEO) | 30 V |
| Emitter-Collector Voltage (VECO) | 5 V |
| Corriente de colector (IC) | 50 mA máx. |
| Dark Current (ICEO) | ?? 100 nA |
| Response Time (Rise/Fall) | 5 ??s / 7 ??s |
| Temperatura de funcionamiento | -25??C to +85??C |
| Temperatura de almacenamiento | De -40 °C a +100 °C |
BCR142WH6327XTSA1 Key Features
- High Sensitivity at 940 nm: Enables precise detection of infrared light, improving accuracy in sensing applications such as object detection and proximity sensing.
- Baja corriente oscura: Minimizes noise for enhanced signal clarity, critical in low-light or high-precision measurement environments.
- Velocidad de conmutación rápida: Response times of 5 ??s rise and 7 ??s fall support rapid signal processing and real-time system responsiveness.
- Amplio rango de temperaturas de funcionamiento: Ensures reliable performance in harsh industrial conditions, facilitating deployment in diverse environments without performance degradation.
Aplicaciones típicas
- Infrared object detection in industrial automation systems where precise and rapid light sensing is essential for safety and process control.
- Proximity sensing in consumer electronics to enable touchless user interface control or presence detection.
- Optical switches and counters where accurate light-triggered switching contributes to reliable operation and data integrity.
- Light beam interruption sensors used in security systems or manufacturing lines for object passage detection and control feedback.
BCR142WH6327XTSA1 Advantages vs Typical Alternatives
This phototransistor offers superior sensitivity and faster switching speeds compared to many standard devices, enabling higher accuracy and efficiency in optical sensing tasks. Its low dark current reduces signal noise, enhancing measurement reliability. The robust operating temperature range and compact packaging facilitate integration into demanding industrial environments. These advantages make it a preferred choice for engineers seeking dependable performance and ease of use for infrared light detection applications.
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BCR142WH6327XTSA1 Brand Info
The BCR142WH6327XTSA1 is a product manufactured by ON Semiconductor, a global leader in energy-efficient semiconductor solutions. ON Semiconductor is renowned for its high-quality optoelectronic components, including phototransistors, photodiodes, and infrared sensors widely used in industrial and consumer electronics. This device reflects ON Semiconductor??s commitment to reliability, precision, and cost-effective design, supporting engineers and sourcing specialists with consistent product availability and comprehensive technical support worldwide.
PREGUNTAS FRECUENTES
What is the primary wavelength sensitivity of this phototransistor?
The phototransistor is primarily sensitive to infrared light with a peak spectral response around 940 nm. This makes it ideal for applications involving IR light detection and proximity sensing.
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Can the device operate reliably in extreme temperature conditions?
Yes, the device supports an operating temperature range from -25??C to +85??C, allowing it to perform reliably in a variety of industrial environments subject to temperature fluctuations.
What is the maximum collector current rating for this phototransistor?
The maximum continuous collector current is rated at 50 mA, ensuring sufficient current handling capability for most optical switching and sensing applications.
