2N3700AUB-Transistor de ON Semiconductor - Transistor NPN, encapsulado TO-92

2N3700AUB-Transistor Overview

The 2N3700AUB is a high-performance NPN bipolar junction transistor designed for medium power switching and amplification applications. Engineered with robust electrical characteristics, it supports collector currents up to 800mA and a voltage rating of 60V, making it suitable for industrial and consumer electronics. This transistor offers reliable gain bandwidth product and low saturation voltage, ensuring efficient operation in signal processing and power regulation circuits. Its TO-92 plastic package allows easy integration into through-hole PCB layouts. For sourcing and technical details, visit the Fabricante de CI sitio web.

2N3700AUB-Transistor Key Features

• High Collector Current Capacity: Supports up to 800mA, enabling robust switching and amplification in demanding circuits.
• Voltage Tolerance: Collector-emitter voltage rating of 60V allows reliable operation across various industrial voltage levels.
• Baja tensión de saturación: Minimizes power loss and heat generation, improving overall circuit efficiency and reliability.
• Gain Bandwidth Product: Suitable for medium frequency applications, offering stable gain performance.
• TO-92 Package: Compact through-hole design simplifies mounting and prototyping in standard PCB assemblies.

2N3700AUB-Transistor Technical Specifications

Parámetro	Symbol	Valor	Unidad
Collector-Emitter Voltage	VCEO	60	V
Collector-Base Voltage	VCBO	75	V
Emitter-Base Voltage	VEBO	5	V
Collector Current (Continuous)	IC	800	mA
Disipación de potencia	PD	625	mW
Ganancia de corriente continua (hFE)	hFE	40?C300	(típico)
Frecuencia de transición	fT	100	MHz
Junction Temperature	TJ	150	??C
Temperatura de almacenamiento	Tstg	-55 a +150	??C

2N3700AUB-Transistor Advantages vs Typical Alternatives

This transistor delivers a balanced combination of high voltage tolerance and robust current handling, outperforming many comparable devices in power efficiency and thermal stability. Its low saturation voltage reduces energy loss, while the wide gain bandwidth supports versatile amplifier designs. The TO-92 package ensures easy integration in legacy and new industrial systems, making it a reliable and cost-effective alternative for engineers focused on durability and consistent performance.

Aplicaciones típicas

• Switching circuits in industrial control systems where reliable medium power handling is critical for operational stability and efficiency.
• Amplifier stages in audio or signal processing equipment requiring medium gain and frequency response.
• Driver stages for relay coils and low power motors in automation and robotics.
• General purpose transistor use in consumer electronics for switching and amplification tasks.

2N3700AUB-Transistor Brand Info

The 2N3700AUB transistor is a widely recognized component manufactured by established semiconductor producers known for rigorous quality control and consistent performance standards. This product is part of a long lineage of reliable NPN transistors designed to meet industrial-grade specifications. Its reputation for stability under varying electrical and thermal conditions makes it a preferred choice for engineers and sourcing specialists seeking dependable discrete transistor solutions.

PREGUNTAS FRECUENTES

¿Cuál es la corriente de colector máxima de este transistor?

The maximum continuous collector current rating is 800mA, allowing the transistor to handle moderate power loads safely without risk of damage under specified operating conditions.

Can this transistor be used in high-frequency circuits?

Yes, with a transition frequency of approximately 100MHz, it is suitable for medium frequency applications such as signal amplification and switching within many industrial electronics systems.

What package type does this transistor come in?

The device is housed in a TO-92 plastic package, which is a compact, through-hole format commonly used for easy PCB mounting and prototyping.

What voltage levels can this transistor tolerate?

It supports a collector-emitter voltage of up to 60V and a collector-base voltage of 75V, ensuring reliable performance across a broad range of voltage environments.

Is this transistor suitable for power amplification?

While it is designed for medium power applications, it is best suited for low to moderate power amplification or switching tasks, rather than high power RF amplification.