2N2369AUB/TR NPN Transistor by ON Semiconductor ?C High-Speed Switching, SOT-23 Package

2N2369AUB/TR Overview

The 2N2369AUB/TR is a high-performance NPN bipolar junction transistor designed for general-purpose amplification and switching applications. Engineered to deliver reliable operation in low-power, high-speed circuits, it offers a balanced combination of gain, frequency response, and voltage handling. This transistor is suitable for industrial and commercial electronics where efficiency and consistent switching are critical. With its robust electrical characteristics and proven silicon planar technology, it ensures dependable performance in diverse circuit designs. Sourced from a reputable Fabricante de CI, the 2N2369AUB/TR supports optimized integration into compact, cost-sensitive systems requiring stable transistor behavior under varying operating conditions.

2N2369AUB/TR Key Features

• High transition frequency (fT): Enables fast switching and amplification at frequencies up to 100 MHz, benefiting high-speed signal processing applications.
• Moderate current gain (hFE): Provides stable amplification with typical gain values suitable for low noise amplification and signal conditioning.
• Low collector-emitter saturation voltage (VCE(sat)): Minimizes power loss during switching, enhancing overall circuit efficiency and reducing thermal dissipation.
• Robust voltage and current ratings: Capable of handling collector-emitter voltages up to 30 V and collector currents up to 0.6 A, ensuring reliable operation in diverse industrial environments.

2N2369AUB/TR Technical Specifications

Parámetro	Especificación	Unidad
Tipo de transistor	Transistor de unión bipolar NPN	?C
Tensión colector-emisor (VCEO)	30	V
Corriente de colector (IC)	0.6	A
Disipación de potencia (Ptot)	0.8	W
Frecuencia de transición (fT)	100	MHz
Ganancia de corriente continua (hFE)	De 40 a 300	?C
Collector-Emitter Saturation Voltage (VCE(sat))	0.4	V
Tipo de envase	Lata metálica TO-18	?C
Temperatura de funcionamiento	-65 a +200	??C

2N2369AUB/TR Advantages vs Typical Alternatives

This transistor offers superior high-frequency response and a broad current gain range compared to typical general-purpose transistors. Its low saturation voltage reduces heat generation, improving energy efficiency in switching circuits. The metal can package enhances thermal conductivity and mechanical reliability, making it well-suited for industrial applications where stability and longevity are critical. These advantages ensure dependable performance when compared to standard plastic-encapsulated transistors.

Aplicaciones típicas

• Signal amplification in audio and radio frequency circuits, leveraging its high transition frequency for clear, low-distortion output.
• Switching regulator circuits requiring fast transistor response and low saturation voltage for efficient power management.
• Buffer stages in digital logic circuits, providing stable current gain and reliable switching performance.
• General-purpose amplification and switching in industrial control systems, benefiting from its robust voltage and temperature handling.

2N2369AUB/TR Brand Info

The 2N2369AUB/TR transistor is manufactured by a leading semiconductor producer renowned for quality and process innovation. This product line reflects the brand??s commitment to delivering reliable, high-performance discrete components tailored for demanding industrial and commercial electronics markets. The device undergoes stringent quality control and testing procedures to meet industry standards, ensuring consistent electrical characteristics and long-term operational stability.

PREGUNTAS FRECUENTES

¿Cuál es la corriente de colector máxima de este transistor?

The maximum collector current rating for this device is 0.6 A. Operating within this limit ensures reliable switching and amplification without risking device damage or performance degradation.

Can the transistor operate at high frequencies?

Yes, with a transition frequency of approximately 100 MHz, this transistor supports high-speed applications, making it suitable for RF amplification and fast switching circuits.

What type of package does the 2N2369AUB/TR use?

The transistor is housed in a TO-18 metal can package, which offers enhanced thermal dissipation and mechanical robustness compared to typical plastic packages.

Is this transistor suitable for high-temperature environments?

Yes, it supports an operating temperature range from -65??C up to +200??C, making it well-suited for harsh industrial environments that require thermal stability.

How does the low collector-emitter saturation voltage benefit circuit design?

A low saturation voltage reduces power loss during switching, which improves overall efficiency and decreases heat generation. This characteristic is critical for power-sensitive and thermally constrained applications.