VN2106N3-G Overview
The VN2106N3-G is a high-performance N-channel MOSFET designed to deliver efficient power switching in industrial and consumer electronics applications. Featuring a low on-resistance and fast switching capabilities, it ensures minimal power loss and thermal stress during operation. Its robust construction supports reliable performance in demanding environments, making it suitable for power management, motor control, and DC-DC conversion. This device, offered by IC-Hersteller, combines efficiency and durability in a compact form factor, enabling engineers to optimize system design with enhanced energy savings and thermal management.
VN2106N3-G Technical Specifications
Parameter | Spezifikation |
---|---|
Gerätetyp | N-channel MOSFET |
Drain-Source-Spannung (VDS) | 30 V |
Kontinuierlicher Drain-Strom (ID) | 25 A (at 25??C) |
Einschalt-Widerstand (RDS(ein)) | 6.5 m?? (max at VGS = 4.5 V) |
Gate-Schwellenspannung (VGS(th)) | 1.0?C2.5 V |
Gesamte Gate-Ladung (Qg) | 12 nC (typical) |
Verlustleistung (PD) | 3.0 W |
Paket | SO-8 |
Betriebstemperaturbereich | -55° C bis +150° C |
VN2106N3-G Key Features
- Niedriger On-Widerstand: The device exhibits a minimal RDS(ein) of 6.5 m??, reducing conduction losses and improving energy efficiency in power conversion circuits.
- Hohe Strombelastbarkeit: Supports continuous drain currents up to 25 A, enabling robust performance in high-load applications such as motor drives and power supplies.
- Schnelle Umschaltgeschwindigkeit: Low total gate charge enhances switching speed, contributing to reduced switching losses and improved system efficiency.
- Breiter Betriebstemperaturbereich: Functional from -55??C to +150??C, ensuring reliable operation in harsh industrial environments.
- Compact SO-8 Package: Facilitates easy integration into space-constrained designs while ensuring effective thermal dissipation.
VN2106N3-G Advantages vs Typical Alternatives
This MOSFET offers superior performance with its low on-resistance and high current capacity compared to typical alternatives. Its efficient gate charge characteristics reduce switching losses, enhancing overall power efficiency. The extended temperature range and compact packaging provide greater reliability and design flexibility for demanding industrial applications. These attributes combine to deliver a robust and energy-efficient solution for power management challenges.
🔥 Meistverkaufte Produkte
TLC555 Timer IC - Präzisionszeitgeber von Texas Instruments im PDIP-8-Gehäuse
Texas Instruments TL081 rauscharmer Operationsverstärker mit JFET-Eingang - DIP-8-Gehäuse
Texas Instruments UC3842 Current Mode PWM Controller - DIP-8 Gehäuse
Texas Instruments LM2937 Spannungsregler im TO-220-Gehäuse - Low Dropout Linear
Typische Anwendungen
- DC-DC Converters: Ideal for use in synchronous buck converters and other power supply circuits requiring efficient switching with minimal losses.
- Motor Control: Suitable for driving motors in industrial automation due to its high current rating and dependable switching performance.
- Load Switching: Provides reliable on/off control in electronic load management systems where low conduction losses are critical.
- Battery Management Systems: Supports efficient power switching and protection in battery-operated devices and energy storage systems.
VN2106N3-G Brand Info
The VN2106N3-G is part of a comprehensive portfolio of power MOSFETs designed and manufactured to meet stringent quality and performance standards. This product line targets engineers seeking reliable and efficient semiconductor solutions for power management. With a focus on innovation and durability, the brand ensures consistent device performance across a wide range of industrial and commercial applications, supporting customers?? needs for energy-efficient and space-saving designs.
FAQ
What voltage levels can the device handle?
This MOSFET is rated for a maximum drain-source voltage of 30 V, making it suitable for low- to medium-voltage power switching applications where stable operation up to this voltage is required.
🌟 Ausgewählte Produkte
"MAX9312ECJ+ Präzisionsspannungskomparator im DIP-Gehäuse für zuverlässige Leistung kaufen"
QCC-711-1-MQFN48C-TR-03-1 Bluetooth Audio SoC with MQFN48C Package
Modell 0339-671-TLM-E - Hochleistungs-TLM-E-Gehäuse für erweiterte Funktionalität
1-1415898-4 Steckergehäuse, Elektrischer Draht-zu-Platine, Buchse, verpackt
How does the on-resistance affect device performance?
The low on-resistance of 6.5 m?? minimizes conduction losses during operation, which improves overall circuit efficiency and reduces heat generation, allowing for more compact thermal management solutions.
Is the device suitable for high-temperature environments?
Yes, the device supports an operating temperature range from -55??C to +150??C, which allows it to maintain reliable performance in harsh and industrial environments where temperature extremes are common.
📩 Kontakt
What package type is used and why is it important?
The SO-8 package offers a compact footprint that simplifies integration into densely populated circuit boards, while also providing effective heat dissipation needed for high-current operation.
Can this MOSFET be used in motor control applications?
Absolutely, the device??s high continuous drain current rating and fast switching capabilities make it well-suited for motor control, enabling efficient power delivery and precise speed regulation in various automation systems.