STTH2N120K5-2AG Diode Rectifier 1200V 2A – TO-220 Package | STMicroelectronics

STH2N120K5-2AG Overview

The STH2N120K5-2AG is a high-performance silicon carbide (SiC) MOSFET designed for industrial power electronics applications. This device offers enhanced switching speed, low conduction losses, and superior thermal performance, making it ideal for high-efficiency power conversion systems. With a blocking voltage of 1200 V and a continuous drain current rating optimized for demanding environments, it supports compact and reliable designs in sectors such as renewable energy, motor drives, and power supplies. The robust construction ensures excellent avalanche ruggedness and long-term reliability. For detailed specifications and purchasing information, visit IC-Hersteller.

STH2N120K5-2AG Technical Specifications

STH2N120K5-2AG Key Features

• 1200 V blocking voltage capability: Supports high-voltage industrial power systems ensuring robust insulation and safety margins.
• Low R_DS(ein) of 55 m??: Minimizes conduction losses, improving overall system efficiency and reducing thermal management requirements.
• High temperature operation up to 175??C: Enables reliable performance under harsh operating conditions typical in industrial environments.
• Fast switching speed with optimized gate charge: Enhances power density and reduces electromagnetic interference (EMI) in switching power supplies.

Typische Anwendungen

• Industrial motor drives requiring efficient and reliable power switching at high voltages and currents.
• Renewable energy inverters where high efficiency and thermal robustness are critical.
• Switched-mode power supplies (SMPS) that benefit from low switching losses and compact design.
• Electric vehicle (EV) onboard chargers and DC/DC converters demanding high voltage blocking and fast switching capability.

STH2N120K5-2AG Advantages vs Typical Alternatives

This device offers superior switching efficiency and thermal performance compared to traditional silicon MOSFETs, enabling reduced power losses and smaller cooling solutions. Its high blocking voltage and low gate charge provide excellent integration flexibility in industrial systems. The rugged TO-247 package ensures long-term reliability under high temperature and stress, making it a preferred choice for demanding power electronics applications.

STH2N120K5-2AG Brand Info

The STH2N120K5-2AG is manufactured by STMicroelectronics, a global leader in semiconductor solutions for power management and industrial electronics. STMicroelectronics specializes in Silicon Carbide MOSFETs designed to meet the stringent requirements of modern power systems, offering products that combine high performance, reliability, and energy efficiency. This device is part of their portfolio supporting next-generation power conversion designs across automotive, renewable energy, and industrial sectors.

FAQ

What is the maximum operating voltage of this MOSFET?

The maximum drain-source voltage rating is 1200 V, which allows the device to operate safely in high-voltage