The STPSC20065W is a high-performance power MOSFET designed for efficient power switching and management in demanding industrial and automotive applications. Featuring a low on-resistance (RDS(ein)) and robust avalanche energy capability, this component ensures minimal conduction losses and enhanced reliability under high-stress conditions. Its compact surface-mount package supports high current density, enabling system designers to achieve space-saving layouts while maintaining thermal efficiency. With optimized switching characteristics, the device contributes to improved power conversion efficiency, making it suitable for DC-DC converters, motor drives, and power management circuits. For more information, visit IC-Hersteller.
STPSC20065W Technical Specifications
Parameter
Wert
Einheit
Drain-Source-Spannung (VDS)
65
V
Kontinuierlicher Drain-Strom (ID) @ 25??C
200
A
Gate-Schwellenspannung (VGS(th))
2.0 ?C 4.0
V
Maximum Power Dissipation (PD)
300
W
RDS(ein) (Max) @ VGS=10 V
1.8
m??
Gesamte Gate-Ladung (Qg)
60
nC
Single Pulse Avalanche Energy (EAS)
120
mJ
Betriebssperrschichttemperatur (Tj)
-55 to 175
??C
Paket Typ
PowerSO-8
–
STPSC20065W Key Features
Niedriger On-Widerstand: The device??s RDS(ein) of 1.8 m?? at 10 V gate drive reduces conduction losses, directly improving system efficiency and thermal management.
High Current Handling Capability: Supports continuous drain currents up to 200 A, enabling use in high-power applications requiring robust switching performance.
Enhanced Avalanche Energy Rating: With 120 mJ avalanche energy, it ensures reliable operation during load transients or short-circuit events, enhancing device ruggedness.
Compact PowerSO-8 Package: Facilitates high-density PCB designs without sacrificing thermal dissipation, aiding in miniaturization of power modules.
Typische Anwendungen
Power management in DC-DC converters for industrial and automotive systems, where efficient switching and thermal reliability are critical.
Motor control circuits requiring high current capacity and fast switching to optimize performance and reduce power losses.
Battery protection and load switching in electric vehicles, leveraging robust avalanche energy and low RDS(ein) for durability and efficiency.
High-frequency power supplies and inverters demanding low gate charge and minimal switching losses for improved overall efficiency.
STPSC20065W Advantages vs Typical Alternatives
This device offers superior low on-resistance combined with a high continuous current rating, leading to enhanced power efficiency and reduced thermal stress compared to typical MOSFET alternatives. Its robust avalanche energy capability improves protection against transient events, increasing system reliability. The compact PowerSO-8 package supports dense PCB layouts, beneficial in space-constrained industrial applications. Together, these factors provide a balanced solution for engineers prioritizing power density, efficiency, and ruggedness.
The STPSC20065W is manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics specializes in power management devices designed to optimize energy efficiency and reliability across industrial, automotive, and consumer applications. Their portfolio includes advanced MOSFETs, IGBTs, and power modules engineered to meet stringent quality and performance standards. This particular power MOSFET reflects ST??s commitment to innovation, combining cutting-edge technology with proven ruggedness to support demanding power conversion and control systems.
