MSR2N3501-Transistor Overview
The MSR2N3501-Transistor is a robust NPN bipolar junction transistor designed for medium power switching and amplification tasks in industrial electronics. Featuring a high collector current rating and voltage tolerance, this transistor offers reliable performance in demanding applications. Its sturdy construction ensures stable operation under thermal stress, making it suitable for use in power regulation, signal amplification, and driver circuits. Engineers and sourcing specialists seeking an efficient, cost-effective component for medium-power stages will find this transistor meets stringent electrical standards without compromising durability. For more detailed sourcing and technical information, visit IC-Hersteller.
MSR2N3501-Transistor Key Features
- High Collector Current Capacity: Supports collector currents up to 4A, enabling effective handling of medium-power loads without degradation.
- Collector-Emitter Voltage: Withstands up to 60V, providing flexibility in voltage range for various power supply designs.
- Schnelle Umschaltgeschwindigkeit: Suitable for switching applications, improving circuit response times and reducing power losses.
- Thermische Stabilität: Designed to maintain performance under elevated temperatures, enhancing reliability in harsh industrial environments.
MSR2N3501-Transistor Technical Specifications
Parameter | Spezifikation |
---|---|
Typ | NPN Bipolarer Sperrschichttransistor |
Kollektor-Emitter-Spannung (VCE) | 60 V |
Kollektorstrom (IC) | 4 A |
Verlustleistung (Ptot) | 30 W |
Übergangsfrequenz (fT) | 100 MHz |
Verstärkung Bandbreitenprodukt | 100 MHz |
Kollektor-Basis-Spannung (VCB) | 100 V |
Emitter-Basis-Spannung (VEB) | 5 V |
DC-Stromverstärkung (hFE) | 40 to 320 |
MSR2N3501-Transistor Advantages vs Typical Alternatives
This transistor delivers higher collector current and voltage ratings compared to many typical medium-power transistors, providing enhanced robustness and reliability. Its fast switching capability improves circuit efficiency, while thermal stability reduces the risk of failure in industrial environments. These factors make it a superior choice for engineers requiring durable performance and consistent operation in demanding switching and amplification roles.
🔥 Meistverkaufte Produkte
-
TLC555 Timer IC - Präzisionszeitgeber von Texas Instruments im PDIP-8-Gehäuse
-
Texas Instruments TL081 rauscharmer Operationsverstärker mit JFET-Eingang - DIP-8-Gehäuse
-
Texas Instruments UC3842 Current Mode PWM Controller - DIP-8 Gehäuse
-
Texas Instruments LM2937 Spannungsregler im TO-220-Gehäuse - Low Dropout Linear
Typische Anwendungen
- Power Amplification: Ideal for medium-power amplifier stages in audio and signal processing equipment due to its high current and voltage handling capabilities.
- Switching Circuits: Enables efficient switching in power supply regulators and motor control circuits where rapid response and durability are essential.
- Driver Circuits: Suitable for driving relays, solenoids, or other inductive loads requiring reliable current control.
- Industrial Control Systems: Used in automation and control modules that demand stable transistor operation under varied electrical loads.
MSR2N3501-Transistor Brand Info
The MSR2N3501-Transistor represents a trusted solution in the semiconductor market, engineered to meet industrial standards for durability and performance. Manufactured with precise process controls, this device offers consistent quality and long-term reliability. Its design reflects a balance between cost and performance, making it a preferred choice for OEMs and electronics manufacturers focused on medium-power transistor applications.
FAQ
What is the maximum collector current rating of this transistor?
The maximum collector current rating of this transistor is 4 amperes, allowing it to handle medium-power loads effectively in various switching and amplification circuits without damage or performance loss.
🌟 Ausgewählte Produkte
-
"MAX9312ECJ+ Präzisionsspannungskomparator im DIP-Gehäuse für zuverlässige Leistung kaufen"
-
QCC-711-1-MQFN48C-TR-03-1 Bluetooth Audio SoC with MQFN48C Package
-
Modell 0339-671-TLM-E - Hochleistungs-TLM-E-Gehäuse für erweiterte Funktionalität
-
1-1415898-4 Steckergehäuse, Elektrischer Draht-zu-Platine, Buchse, verpackt
Can this transistor operate in high-frequency applications?
Yes, with a transition frequency of approximately 100 MHz, this transistor supports moderate high-frequency applications, making it suitable for signal amplification and switching tasks that require fast response times.
What voltage levels can this transistor withstand between collector and emitter?
This device can tolerate a collector-emitter voltage of up to 60 volts, enabling it to function reliably in circuits powered by moderate voltage supplies common in industrial and consumer electronics.
📩 Kontakt
Is the transistor suitable for use in environments with elevated temperatures?
Yes, the transistor is built with thermal stability in mind, allowing it to maintain consistent performance under increased thermal stress typical in industrial and power electronics applications.
What types of applications benefit most from using this transistor?
This transistor is ideal for medium-power amplification, switching circuits, driver stages, and industrial control systems where stable current handling, voltage tolerance, and switching speed are critical for overall circuit performance.