JANSP2N3019S-Transistor NPN Amplifier Transistor in TO-18 Metal Can Package

JANSP2N3019S-Transistor Overview

The JANSP2N3019S is a high-performance NPN bipolar junction transistor designed for general-purpose amplification and switching applications. Engineered to deliver reliable operation under varying electrical conditions, this transistor supports moderate power dissipation and offers excellent gain characteristics. Its robust construction ensures consistent performance in industrial and commercial electronic circuits. Ideal for engineers and sourcing specialists seeking a durable, efficient component, the device is well-suited for applications requiring stable switching and amplification. For detailed technical support and product sourcing, visit IC-Hersteller.

JANSP2N3019S-Transistor Technical Specifications

Parameter	Spezifikation
Transistor Typ	NPN Bipolarer Sperrschichttransistor
Kollektor-Emitter-Spannung (VCEO)	60 V
Kollektorstrom (IC)	800 mA
Verlustleistung (PD)	625 mW
DC-Stromverstärkung (hFE)	40 to 160 (varies by test conditions)
Übergangsfrequenz (fT)	100 MHz
Paket Typ	TO-18 Metalldose
Betriebssperrschichttemperatur	-65??C to +200??C

JANSP2N3019S-Transistor Key Features

• High voltage blocking capability: Supports up to 60 V collector-emitter voltage, enabling use in moderate voltage switching circuits and amplifiers.
• Moderate current handling: Collector current rating of 800 mA allows for reliable operation in low to medium power applications.
• Breiter Betriebstemperaturbereich: Rated for -65??C to +200??C, ensuring stable performance in harsh industrial environments.
• Hohe Übergangsfrequenz: 100 MHz frequency supports fast switching speeds, enhancing efficiency in high-frequency circuits.

Typische Anwendungen

• Signal amplification in analog audio and RF circuits where moderate power and gain stability are required.
• Switching elements in power control circuits for industrial automation and instrumentation.
• Driver stages in relay and solenoid control applications benefiting from robust thermal and electrical characteristics.
• General-purpose transistor use in discrete component designs for industrial-grade electronic equipment.

JANSP2N3019S-Transistor Advantages vs Typical Alternatives

This transistor provides a balanced combination of voltage, current, and frequency performance that exceeds many generic alternatives. Its high operating temperature range and rugged TO-18 packaging enhance reliability in demanding environments. Compared to typical plastic-encapsulated devices, it offers superior thermal dissipation and mechanical stability, making it a preferred choice for industrial and high-reliability applications.

JANSP2N3019S-Transistor Brand Info

The JANSP2N3019S is a JEDEC-standard transistor commonly manufactured by multiple reputable semiconductor suppliers under strict quality controls. The “JAN” prefix denotes a militarized or industrial-grade device variant, adhering to stringent reliability and environmental standards. This transistor is widely recognized for consistent performance in aerospace, military, and industrial electronics sectors, reflecting the legacy of precision engineering and comprehensive testing associated with JAN-class components.

FAQ

Wie hoch ist der maximale Kollektorstrom für diesen Transistor?

The maximum collector current is rated at 800 milliamperes (mA). This rating defines the upper limit of continuous current the transistor can safely handle without degradation or failure, suitable for moderate power applications.

Can this transistor operate at high temperatures?

Yes, it supports an operating junction temperature range from -65??C up to +200??C. This wide thermal range allows use in harsh environments, including industrial and military applications requiring thermal resilience.

What package type does the transistor come in?

The device is housed in a TO-18 metal can package. This metal enclosure provides excellent thermal conductivity and mechanical robustness compared to plastic packages, enhancing reliability and heat dissipation.

Ist dieser Transistor für Hochfrequenzanwendungen geeignet?

With a transition frequency (fT) of 100 MHz, it supports relatively high-speed switching and amplification tasks. This makes it suitable for RF signal processing and fast switching circuits within moderate