JANSR2N3700UB Overview
The JANSR2N3700UB is a robust NPN bipolar junction transistor (BJT) optimized for switching and amplification in industrial electronics. Designed to handle moderate power loads with a collector current rating of up to 200mA, this transistor delivers reliable performance in demanding environments. Its voltage ratings and gain characteristics make it suitable for signal amplification, switching circuits, and general-purpose use in various industrial control systems. Manufactured to meet stringent quality standards, the JANSR2N3700UB ensures consistent operation across a wide temperature range. For sourcing and technical support, visit the IC-Hersteller Website.
JANSR2N3700UB Key Features
- High Collector-Emitter Voltage (Vceo) of 60V: Enables reliable switching and amplification in circuits requiring moderate voltage handling, ensuring durability under stress.
- Collector Current (Ic) up to 200mA: Supports moderate power loads, making it versatile for signal processing and control applications.
- Minimum DC Current Gain (hFE) of 40: Provides sufficient amplification capability for efficient signal boosting and switching performance.
- Wide Operating Temperature Range (-55??C to +150??C): Ensures dependable operation in harsh industrial environments and elevated temperature conditions.
- Low Collector-Emitter Saturation Voltage (Vce(sat)): Reduces power dissipation during switching, enhancing energy efficiency and thermal management.
- Standard TO-92 Package: Facilitates easy integration into through-hole PCB designs commonly found in industrial control and signal processing equipment.
- Complementary Device Availability: Allows for balanced push-pull amplifier configurations, improving design flexibility for engineers.
JANSR2N3700UB Technical Specifications
| Parameter | Spezifikation |
|---|---|
| Transistor Typ | NPN Bipolarer Sperrschichttransistor |
| Kollektor-Emitter-Spannung (Vceo) | 60 V (max) |
| Collector-Base Voltage (Vcbo) | 75 V (max) |
| Emitter-Base Voltage (Vebo) | 5 V (max) |
| Kollektorstrom (Ic) | 200 mA (maximal) |
| DC-Stromverstärkung (hFE) | 40 (min) at Ic = 10 mA, Vce = 10 V |
| Power Dissipation (Ptot) | 625 mW (max) |
| Übergangsfrequenz (fT) | 100 MHz (typisch) |
| Betriebstemperaturbereich | -55° C bis +150° C |
| Paket Typ | TO-92 |
JANSR2N3700UB Advantages vs Typical Alternatives
Compared to typical general-purpose transistors, this device offers a higher maximum collector-emitter voltage and a robust operating temperature range, enhancing reliability in industrial systems. Its moderate current rating combined with low saturation voltage improves switching efficiency and reduces thermal stress. The consistent gain characteristics support precise signal amplification, making it a superior choice for engineers seeking durability and performance in compact through-hole packages.
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Typische Anwendungen
- Signal amplification in industrial control circuits requiring reliable gain and moderate current handling, ensuring stable performance in automation systems.
- Switching applications in low to medium power electronic devices, facilitating efficient control of relays, LEDs, and small motors.
- Driver stages for audio and sensor circuits, where consistent gain and low distortion are critical for accurate signal processing.
- General-purpose amplification and switching in embedded systems and instrumentation, benefiting from its wide temperature tolerance and proven reliability.
JANSR2N3700UB Brand Info
This transistor is produced under the JANSR series by a leading semiconductor manufacturer renowned for high-quality discrete components tailored for industrial applications. The JANSR2N3700UB exemplifies the brand??s commitment to delivering reliable and consistent transistor solutions that meet stringent industry standards. Designed for ease of integration and dependable operation, this device supports engineers and sourcing specialists in building robust electronic systems across diverse industrial sectors.
FAQ
What is the maximum collector current rating for this transistor?
The maximum collector current rating is 200 milliamps (mA). This allows the transistor to handle moderate power loads in switching and amplification applications without compromising reliability.
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What package type is used for this transistor, and why is it important?
The device is housed in a TO-92 package, a common through-hole package that facilitates easy handling and soldering. This is important for engineers who require straightforward assembly in prototyping or production of industrial PCBs.
Can this transistor operate in high-temperature environments?
Yes, it supports an operating temperature range from -55??C up to +150??C, making it suitable for harsh industrial conditions where thermal stability is critical for consistent performance.
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What is the typical gain (hFE) value, and how does it affect circuit design?
The typical DC current gain is at least 40 at a collector current of 10mA and Vce of 10V. This gain level ensures adequate amplification for signal processing and switching without excessive noise or distortion.
How does this transistor compare in terms of voltage ratings?
The collector-emitter voltage rating is 60V, and the collector-base voltage rating is 75V, which provides a good margin for use in circuits requiring moderate voltage handling, improving robustness compared to lower-voltage alternatives.
