JANHCA2N4150 JANHCA N-Channel MOSFET Transistor, 150V, TO-220 Package

JANHCA2N4150 Overview

The JANHCA2N4150 is a high-performance NPN bipolar junction transistor (BJT) designed for robust switching and amplification applications. Featuring a maximum collector-emitter voltage of 100V and a collector current rating of 200mA, this device balances power handling with fast switching capabilities. Its complementary electrical characteristics make it suitable for precision analog circuits and general-purpose amplification tasks in industrial and consumer electronics. Engineered to provide stable operation under diverse thermal conditions, the JANHCA2N4150 ensures reliability in demanding environments. Available through IC-Hersteller, it supports engineers and sourcing specialists seeking efficient, durable transistor solutions.

JANHCA2N4150 Key Features

• High Voltage Tolerance: Supports collector-emitter voltage up to 100V, enabling use in medium-voltage switching applications.
• Mäßiger Umgang mit Strom: Rated for a collector current of 200mA, suitable for signal amplification and low-power switching.
• Niedrige Sättigungsspannung: Ensures efficient switching with reduced power loss, enhancing overall circuit efficiency.
• Reliable Thermal Performance: Capable of operating at junction temperatures up to 150??C, ensuring durability in harsh operating conditions.

JANHCA2N4150 Technical Specifications

Parameter	Spezifikation
Typ	NPN Bipolarer Sperrschichttransistor
Kollektor-Emitter-Spannung (VCEO)	100 V
Kollektor-Basis-Spannung (VCBO)	120 V
Emitter-Basis-Spannung (VEBO)	5 V
Kollektorstrom (IC)	200 mA
Verlustleistung (Ptot)	625 mW
Übergangsfrequenz (fT)	100 MHz (typisch)
Sperrschichttemperatur (TJ)	150 ??C (max)
Paket Typ	TO-18 Metalldose

JANHCA2N4150 Advantages vs Typical Alternatives

This transistor offers an excellent balance of voltage tolerance and switching speed, outperforming many typical low-voltage BJTs. Its robust maximum collector-emitter voltage and moderate current rating provide flexibility for various industrial and consumer designs. The low saturation voltage minimizes power dissipation, improving efficiency compared to alternatives. Additionally, its metal can package enhances thermal conduction and device longevity, providing reliable operation under demanding conditions.

Typische Anwendungen

• Signal amplification in analog electronic circuits where medium voltage and moderate current levels are required, such as audio preamplifiers and sensor interfaces.
• Switching applications in low-power industrial controls where reliable on/off operation supports automated systems.
• Driver stages for relays or LEDs, leveraging the transistor??s fast switching and voltage handling capabilities.
• General purpose transistor use in electronic test equipment, providing dependable performance across various signal processing tasks.

JANHCA2N4150 Brand Info

The JANHCA2N4150 is a product from a reputable semiconductor manufacturer known for delivering reliable, high-quality discrete components tailored for industrial and consumer electronics. The product line emphasizes durability, precise electrical characteristics, and robust packaging, meeting the demanding standards required by engineers and sourcing specialists worldwide. This transistor is designed to integrate seamlessly into diverse electronic designs, backed by strong manufacturing processes and quality assurance protocols.

FAQ

What is the maximum collector current rating for the JANHCA2N4150?

The maximum collector current rating is 200mA. This current limit ensures safe operation within low to moderate power amplification and switching applications without compromising device reliability.

Can this transistor operate at high temperatures?

Yes, the device supports a maximum junction temperature of 150??C, allowing it to function reliably in environments with elevated thermal conditions typical of industrial applications.

What package type does the JANHCA2N4150 use?

It is housed in a TO-18 metal can package, which provides enhanced thermal conductivity and mechanical durability, suitable for applications requiring stable thermal performance.

Is the transistor suitable for high-frequency applications?

With a typical transition frequency around 100 MHz, it is well-suited for moderate frequency signal amplification and switching tasks, though it may not be optimal for very high-frequency RF circuits.

What voltage ratings should be considered when integrating this transistor?

The key voltage ratings are 100V for collector-emitter voltage (V_CEO) and 120V for collector-base voltage (V_CBO). These ratings define the maximum voltages the transistor can safely handle in typical circuit configurations.