ISC010N04NM6ATMA1 N-Channel MOSFET, 40V 100A, OptiMOS6, SuperSO8 Package

  • Serves as a power MOSFET, enabling efficient switching and control in electronic circuits.
  • Features an N-channel configuration, which supports low on-resistance for reduced conduction losses.
  • The compact package design allows for high-density layouts and conserves valuable PCB space.
  • Ideal for use in power management systems where fast switching and energy efficiency are critical.
  • Manufactured for consistent performance, supporting long-term operation in demanding environments.
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ISC010N04NM6ATMA1 Overview

The ISC010N04NM6ATMA1 is a high-performance N-channel MOSFET designed for demanding power management and switching applications. This device offers low on-state resistance and robust current handling, making it ideal for use in high-efficiency systems where thermal and electrical performance are critical. With advanced trench technology and compact SMD packaging, this component delivers reliable, space-saving integration for industrial, automotive, and consumer electronics solutions. For detailed supply chain and manufacturer information, please visit IC-Hersteller.

ISC010N04NM6ATMA1 Technical Specifications

Parameter Wert
Transistor Polarity N-Channel
Drain-Source-Spannung (VDS) 40 V
Kontinuierlicher Drain-Strom (ID) 100 A
RDS(ein) (Max) 1 m??
Gate-Source Voltage (VGS) ?I20 V
Paket Typ SuperSO8
Mounting Surface Mount (SMD)
Technologie Trench

ISC010N04NM6ATMA1 Key Features

  • Ultra-low RDS(ein) of 1 m?? significantly reduces conduction losses, enabling higher system efficiency and lower heat generation.
  • Supports continuous drain current of up to 100 A, delivering robust power handling for demanding industrial and automotive power stages.
  • Wide gate-source voltage tolerance (?I20 V) enhances design flexibility and immunity to voltage transients, improving reliability in harsh environments.
  • Trench technology and compact SuperSO8 package provide high density integration, optimizing PCB layout and saving valuable board space.

ISC010N04NM6ATMA1 Advantages vs Typical Alternatives

Compared to standard MOSFETs, this device stands out due to its extremely low on-resistance, high current capability, and compact SuperSO8 package. These attributes contribute to improved energy efficiency, reduced thermal management requirements, and greater design flexibility, making it a preferred solution for engineers seeking reliable, high-density power switching components.

Typische Anwendungen

  • Power management modules in industrial automation systems, where low RDS(ein) and high current capability are essential for minimizing energy loss and maximizing system uptime.
  • Automotive motor drive circuits requiring robust switching performance and thermal reliability in a compact, surface-mount form factor.
  • DC-DC converters and synchronous rectifiers for telecom or server power supplies, leveraging efficient switching and high integration density.
  • Consumer electronics power stages, such as battery management or load switching, benefiting from the device??s efficiency and compact footprint.

ISC010N04NM6ATMA1 Brand Info

The ISC010N04NM6ATMA1 is engineered to meet the stringent demands of modern power electronics. With a reputation for innovation and quality, this device integrates advanced trench MOSFET technology to deliver exceptional performance in energy efficiency and switching reliability. Its SuperSO8 package design supports automated assembly processes, catering to high-volume manufacturing and robust end-product performance. This product is part of a renowned MOSFET portfolio, recognized for consistency and engineering excellence.

FAQ

What is the maximum continuous drain current supported by this device?

The ISC010N04NM6ATMA1 supports a maximum continuous drain current of 100 A, making it suitable for high-power applications that require reliable current handling and efficient switching capability.

Which package type is used, and what are its mounting options?

This MOSFET utilizes the SuperSO8 package type and is intended for surface mount (SMD) applications. Its compact footprint and automated assembly compatibility make it ideal for space-constrained PCBs and high-volume production environments.

How does the low RDS(ein) value benefit power systems?

With an ultra-low RDS(ein) of just 1 m??, this device minimizes conduction losses during operation. This translates to greater energy efficiency, reduced heat generation, and potentially smaller thermal management requirements in the end application.

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Is the device suitable for automotive or industrial environments?

Yes, the wide gate-source voltage range (?I20 V) and robust construction make it suitable for automotive and industrial environments, where voltage transients and high current loads are common design considerations.

What technology is used in the fabrication of this MOSFET?

This product features trench MOSFET technology, which provides lower RDS(ein) and improved performance over traditional planar structures. This results in better efficiency and reliability for high-performance power switching applications.

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