HMC241AQS16ETR Overview
The HMC241AQS16ETR is a high-performance, low-noise, GaAs MMIC distributed amplifier designed for broadband amplification from DC to 16 GHz. This device offers a flat gain response with exceptional linearity, making it ideal for demanding RF and microwave applications. Its wide bandwidth and low noise figure enable superior signal integrity, while the integrated design ensures ease of implementation in complex systems. The compact 16-lead QSOP package supports efficient thermal management and reliable operation in industrial environments. For detailed semiconductor solutions, visit IC-Hersteller.
HMC241AQS16ETR Technical Specifications
Parameter | Spezifikation |
---|---|
Frequenzbereich | DC to 16 GHz |
Small-Signal Gain | 17 dB (typical) |
Rauschzahl | 4.5 dB (typical at 12 GHz) |
Output 1 dB Compression Point (P1dB) | +10 dBm (typical) |
Input Return Loss | 14 dB (typical) |
Output Return Loss | 14 dB (typical) |
Versorgungsspannung | +5 V |
Versorgungsstrom | 120 mA (typical) |
Paket Typ | 16-lead QSOP |
HMC241AQS16ETR Key Features
- Broadband Amplification: Provides consistent gain from DC to 16 GHz, ensuring wide frequency coverage for versatile RF applications.
- Niedrige Rauschzahl: Minimizes signal degradation, which is critical for sensitive receiver front-end designs and improved system sensitivity.
- Hohe Linearität: Maintains signal integrity with a +10 dBm output compression point, reducing distortion in high dynamic range systems.
- Compact QSOP Package: Enables efficient PCB layout with improved thermal dissipation, aiding reliability under continuous operation.
- Niedriger Ruhestrom: At 120 mA typical, supports power-efficient designs without compromising performance.
- Robust Input/Output Matching: 14 dB return loss reduces signal reflections, optimizing power transfer and minimizing losses.
- Integrated GaAs MMIC Technology: Ensures high-frequency performance and stability across temperature variations.
HMC241AQS16ETR Advantages vs Typical Alternatives
This amplifier stands out with its broad frequency range up to 16 GHz and superior noise figure, offering enhanced sensitivity compared to silicon-based alternatives. Its high linearity and low distortion improve signal fidelity in complex RF chains. The integrated GaAs MMIC design delivers consistent performance and robust thermal management in a compact QSOP package, providing a reliable and efficient solution for high-frequency industrial applications.
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Typische Anwendungen
- Broadband RF and microwave amplification in test and measurement equipment, providing consistent gain and low noise across wide frequency bands for accurate signal analysis.
- Wireless communications infrastructure, including base stations and repeaters, where linearity and noise figure critically impact overall system performance.
- Radar systems requiring wide bandwidth and stable gain to detect and process signals with minimal distortion and noise interference.
- Satellite and aerospace transceivers, leveraging the device??s high-frequency capability and reliability under varying environmental conditions.
HMC241AQS16ETR Brand Info
The HMC241AQS16ETR is part of a high-reliability product line designed for demanding RF and microwave applications. Developed using advanced GaAs MMIC technology, this amplifier reflects the brand??s commitment to delivering high-performance semiconductor solutions that meet stringent industrial specifications. The device??s robust design and compact form factor align with industry standards for integration in both commercial and defense system architectures, ensuring dependable operation in critical applications.
FAQ
What is the frequency range supported by this amplifier?
The amplifier operates from DC up to 16 GHz, covering a broad spectrum
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