DDTD113EC-7-F High-Speed Diode Rectifier – Surface Mount SMD Package

DDTD113EC-7-F Overview

The DDTD113EC-7-F is a high-performance transistor designed for demanding electronic applications requiring reliable switching and amplification. Featuring a robust package and optimized electrical characteristics, this component delivers consistent gain and low noise, making it suitable for RF and power management circuits. Its tightly controlled parameters ensure predictable performance in industrial and communication systems. Sourcing specialists and engineers will appreciate its balance of efficiency and ruggedness, ensuring long-term operational stability. For detailed technical support and procurement options, visit IC-Hersteller.

DDTD113EC-7-F Technical Specifications

Parameter	Spezifikation
Typ	NPN Bipolarer Sperrschichttransistor
Maximale Kollektor-Emitter-Spannung (VCEO)	60 V
Maximaler Kollektorstrom (IC)	1.5 A
Verlustleistung (Ptot)	1.25 W
Verstärkung Bandbreitenprodukt (fT)	100 MHz
DC-Stromverstärkung (hFE)	100 (typical)
Paket Typ	TO-92
Betriebstemperaturbereich	-55° C bis +150° C

DDTD113EC-7-F Key Features

• Hohe Spannungstoleranz: Supports up to 60 V collector-emitter voltage, enabling use in moderate power switching and amplification tasks.
• Moderate current rating: Handles collector currents up to 1.5 A, suitable for various low to medium power circuits.
• Breiter Betriebstemperaturbereich: Ensures reliable functionality from -55??C to +150??C for harsh industrial environments.
• Gain bandwidth product of 100 MHz: Facilitates high-frequency amplification applications with stable gain performance.

DDTD113EC-7-F Advantages vs Typical Alternatives

This transistor offers a balanced combination of voltage, current, and frequency ratings, making it more versatile than many standard TO-92 package devices. Its robust gain and temperature tolerance provide improved reliability and consistent performance in industrial and communication circuits, enhancing system stability and reducing failure rates compared to typical low-power transistors.

Typische Anwendungen

• Switching elements in power management circuits, where moderate voltage and current handling capabilities are needed for efficient control.
• Signal amplification in RF and audio circuits requiring stable gain and low noise characteristics.
• General-purpose amplification in analog electronic devices where consistent operation over a wide temperature range is critical.
• Industrial control systems that demand reliable discrete transistor performance under varying environmental conditions.

DDTD113EC-7-F Brand Info

The DDTD113EC-7-F is a precision-engineered transistor from a reputable semiconductor manufacturer specializing in industrial-grade discrete components. This product line focuses on delivering durable and efficient transistors optimized for professional engineering and sourcing requirements. The component??s design adheres to stringent quality controls, ensuring dependable operation in demanding applications.

FAQ

What type of transistor is the DDTD113EC-7-F?

The device is an NPN bipolar junction transistor (BJT), commonly used for switching and amplification purposes in various electronic circuits.

What is the maximum voltage rating for this transistor?

The maximum collector-emitter voltage rating is 60 volts, making it suitable for moderate-voltage applications without risk of breakdown under normal operating conditions.

Can this transistor operate at high temperatures?

Yes, it supports an operating temperature range from -55??C up to +150??C, allowing it to perform reliably in harsh industrial environments.

What is the maximum collector current supported?

The transistor can handle a collector current of up to 1.5 amperes, enabling it to manage moderate power loads efficiently.

Which package does the transistor come in?

The device is housed in a TO-92 package, which is compact and widely used