DDTC123EUA-7 High-Speed Diode Rectifier – DO-41 Package

  • Dieses Gerät sorgt für eine effiziente Leistungsumwandlung und gewährleistet eine stabile Spannungsversorgung für verschiedene elektronische Systeme.
  • The compact CBZ package reduces board space, enabling integration into designs with limited area.
  • Designed for low power consumption, it helps extend battery life in portable and remote applications.
  • Ideal for use in embedded control systems where consistent performance under varying loads is critical.
  • Manufactured with strict quality controls to maintain long-term reliability in demanding operational environments.
产品上方询盘

DDTC123EUA-7 Overview

The DDTC123EUA-7 is a high-performance dual NPN transistor designed for efficient switching and amplification in industrial and consumer electronic applications. Featuring a low saturation voltage and high current gain, it ensures reliable operation in low-voltage circuits. Its robust thermal characteristics support enhanced durability under demanding conditions. This device is ideal for engineers and sourcing specialists seeking a compact, cost-effective solution with strong electrical performance from a trusted IC-Hersteller.

DDTC123EUA-7 Technical Specifications

Parameter Spezifikation
Transistor Typ Zweifach-NPN
Kollektor-Emitter-Spannung (VCEO) 45 V
Kollektorstrom (IC) 600 mA
DC-Stromverstärkung (hFE) 100 to 300 (at IC = 100 mA)
Verlustleistung (Ptot) 400 mW
Übergangsfrequenz (fT) 100 MHz
Paket Typ TO-236 (SOT-23)
Betriebstemperaturbereich -55° C bis +150° C

DDTC123EUA-7 Key Features

  • Konfiguration mit zwei NPN-Transistoren: Offers compact integration for switching and amplification, reducing PCB space requirements.
  • Hohe Stromverstärkung: Provides efficient amplification with minimal input current, enhancing circuit sensitivity.
  • Low collector-emitter saturation voltage: Ensures energy-efficient switching, improving overall power management.
  • Breiter Betriebstemperaturbereich: Maintains stable performance in harsh industrial environments.
  • Small SOT-23 package: Facilitates easy surface mounting on compact boards, supporting miniaturization trends.

DDTC123EUA-7 Advantages vs Typical Alternatives

This transistor offers superior current gain and lower saturation voltage compared to typical discrete devices, enhancing switching efficiency and reducing power losses. Its compact dual configuration and robust thermal capabilities provide greater reliability and integration flexibility, making it a preferred choice for engineers seeking optimized performance in space-constrained and thermally demanding applications.

Typische Anwendungen

  • Signal amplification and switching circuits in portable electronic devices, benefiting from low power consumption and high gain.
  • Driver stages for relays and small motors, enabling precise control with minimal input signal strength.
  • Interface circuitry in industrial automation systems requiring durable components that operate reliably across wide temperature ranges.
  • Consumer electronics such as audio equipment where compact size and efficient amplification are critical.

DDTC123EUA-7 Brand Info

Manufactured by a leading semiconductor provider, the DDTC123EUA-7 represents a reliable and well-engineered transistor solution within their product portfolio. This device reflects the brand??s commitment to quality, consistency, and performance, supporting engineers and designers with components that meet rigorous industrial standards while enabling cost-effective manufacturing and assembly.

FAQ

Welche Art von Transistorkonfiguration wird in diesem Gerät verwendet?

The device features a dual NPN transistor configuration, which integrates two NPN transistors within a single package. This configuration supports compact design and efficient circuit implementation in switching and amplification roles.

What is the maximum collector current rating?

The maximum collector current for each transistor in this device is 600 mA, enabling it to handle moderate loads typical in signal amplification and switching applications.

Welchen Einfluss hat der Betriebstemperaturbereich auf die Anwendung?

With an operating temperature range from -55??C to +150??C, this transistor is suitable for use in harsh and variable industrial environments, ensuring stable performance and reliability under thermal stress.

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产品中间询盘

In welchem Gehäuse befindet sich dieser Transistor?

The transistor is housed in a TO-236 (SOT-23) surface-mount package, which is widely used for its compact size and compatibility with automated PCB

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