DDTC113TCA-7 Overview
The DDTC113TCA-7 transistor is a complementary NPN silicon epitaxial planar device designed for low noise and high-speed switching applications. It features a high transition frequency, making it suitable for RF and intermediate frequency amplifier stages. With a maximum collector current of 150mA and a low noise figure, this transistor offers reliable performance in communication and signal amplification circuits. Its compact SOT-23 package supports easy integration into compact PCB layouts.IC-Hersteller
DDTC113TCA-7 Technical Specifications
Parameter | Spezifikation |
---|---|
Transistor Typ | NPN Silicon Epitaxial Planar |
Kollektor-Emitter-Spannung (VCEO) | 40 V |
Kollektorstrom (IC) | 150 mA |
Übergangsfrequenz (fT) | 100 MHz (typisch) |
Rauschzahl | Low noise operation optimized |
Verlustleistung (Ptot) | 300 mW |
Paket Typ | SOT-23 |
Betriebstemperaturbereich | -55° C bis +150° C |
DDTC113TCA-7 Key Features
- Hohe Übergangsfrequenz: Enables efficient RF amplification and high-speed switching, crucial for communication circuits.
- Low noise figure: Reduces signal distortion, improving overall signal quality in sensitive applications.
- Compact SOT-23 package: Erleichtert platzsparende PCB-Designs und vereinfacht automatisierte Montageprozesse.
- Robuste Kollektorstromstärke: Supports up to 150mA, allowing reliable operation in moderately demanding circuits.
DDTC113TCA-7 Advantages vs Typical Alternatives
This transistor offers superior high-frequency performance and low noise characteristics compared to typical general-purpose transistors. Its optimized epitaxial planar structure enhances switching speed and signal integrity, while the compact SOT-23 package ensures ease of integration into dense electronic assemblies. These factors collectively deliver enhanced reliability and efficiency in RF and amplifier circuits.
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Typische Anwendungen
- RF amplifier stages in communication equipment, where low noise and high-frequency response are essential for signal clarity and strength.
- Intermediate frequency (IF) amplifiers requiring fast switching and stable gain performance.
- High-speed switching circuits in industrial control systems demanding reliable transistor operation.
- General purpose amplification in portable and battery-powered devices benefiting from low power dissipation.
DDTC113TCA-7 Brand Info
The DDTC113TCA-7 transistor is a product designed and manufactured by a leading semiconductor supplier known for quality and reliability in analog and RF components. This device reflects the company??s commitment to providing high-performance transistors optimized for communication and industrial applications, ensuring consistent performance under varying operational conditions.
FAQ
What is the maximum collector current rating of this transistor?
The maximum collector current rating is 150mA, allowing it to handle moderate current levels suitable for RF amplification and switching circuits without compromising device reliability.
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Kann dieser Transistor in Hochfrequenzanwendungen eingesetzt werden?
Yes, with a typical transition frequency of 100 MHz, it is well-suited for RF and intermediate frequency amplification, enabling efficient operation in communication systems and other high-speed circuits.
What package type does this transistor use, and why is it important?
This transistor is housed in a SOT-23 package, which is a small, surface-mount form factor. This package supports compact PCB layouts and is compatible with automated assembly processes, making it ideal for modern electronics manufacturing.
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What is the operating temperature range for this transistor?
The device operates reliably within a temperature range from -55??C to +150??C, allowing it to function effectively in various environmental conditions commonly encountered in industrial and communication equipment.
How does the low noise figure benefit circuit performance?
The low noise figure reduces