The DDTA123EE-7-F is a high-performance dual digital transistor featuring built-in resistors designed for efficient switching and amplification in industrial electronics. This device integrates two NPN transistors with fixed base resistors, simplifying circuit design and reducing component count. Its robust construction ensures reliable operation under varied thermal and electrical conditions, making it suitable for power management, signal amplification, and interface applications. Sourcing engineers and design professionals benefit from its compact SOT-363 package and stable electrical characteristics, facilitating streamlined PCB layouts and improved manufacturing yields. For detailed technical insights and sourcing options, visit IC-Hersteller.
DDTA123EE-7-F Technical Specifications
Parameter
Spezifikation
Transistor Typ
Dual NPN Digital Transistor
Built-in Base Resistors
Yes (Fixed)
Maximum Collector-Emitter Voltage (VCEO)
50 V
Maximum Collector Current (IC)
100 mA
Verlustleistung (Pd)
300 mW
Stromverstärkung (hFE)
110 to 800 (typical)
Paket Typ
SOT-363 (6-pin)
Betriebstemperaturbereich
-40??C bis +85??C
Input Resistor Values
Base resistors integrated: typically 10 k??
DDTA123EE-7-F Key Features
Integrated Base Resistors: Simplifies circuit design by eliminating the need for external resistors, reducing overall component count and saving PCB space.
Zweifache NPN-Transistor-Konfiguration: Enables compact implementation of switching or amplification circuits requiring two transistors, improving design efficiency.
High Current Gain Range: Offers reliable amplification with hFE values from 110 to 800, ensuring consistent performance across various load conditions.
Compact SOT-363 Package: Facilitates high-density PCB layouts and is compatible with automated surface-mount assembly processes.
Breiter Betriebstemperaturbereich: Supports dependable operation in industrial environments, maintaining electrical stability from -40??C to +85??C.
Robust Electrical Ratings: 50 V maximum collector-emitter voltage and 100 mA collector current ratings suit typical low-power industrial applications.
Low Power Dissipation: At 300 mW, the device ensures energy-efficient operation, contributing to system-level thermal management.
DDTA123EE-7-F Advantages vs Typical Alternatives
This device offers enhanced integration with built-in base resistors, reducing the need for additional components and simplifying assembly. Its dual transistor design in a single compact package improves circuit density over discrete transistor solutions. The broad current gain range and stable electrical parameters provide superior switching accuracy and reliability compared to standard transistors without integrated resistors. Additionally, the optimized power dissipation and wide temperature tolerance ensure dependable operation in demanding industrial environments.
Signal amplification and switching in industrial control systems, where compactness and reliability are critical for long-term operation.
Interface circuits between low-voltage logic devices and higher power loads, providing efficient current drive with minimal external components.
Driver stages for LEDs and small relays requiring precise current control and simplified board layout.
Low-power motor control or sensor interface circuits in automated manufacturing and instrumentation equipment.
DDTA123EE-7-F Brand Info
The DDTA123EE-7-F is a signature product from a trusted semiconductor manufacturer known for delivering reliable, application-focused transistor solutions. Designed with industrial-grade quality standards, this digital transistor module integrates essential base resistors, enabling engineers to streamline designs without compromising performance. The brand emphasizes high-quality packaging, consistent electrical characteristics, and broad distribution support, making this transistor a preferred choice for engineers and sourcing specialists seeking dependable components for mass production and prototyping alike.
