CY27H256-35ZC 256K x 8 SRAM Memory IC, 35ns Access, 28-Pin DIP Package

CY27H256-35ZC Overview

The CY27H256-35ZC is a high-performance 256K x 8-bit Static Random Access Memory (SRAM) designed to deliver fast access times and reliable data storage for industrial and embedded systems. With a 35 ns access time, it supports rapid data retrieval essential for time-critical applications. This device features a low power consumption profile and a 28-pin Dual Inline Package (DIP), ensuring easy integration into existing hardware platforms. Engineered to meet stringent industrial standards, the CY27H256-35ZC is optimized for system memory expansion, cache memory, and high-speed buffering. For detailed specifications and ordering information, visit IC-Hersteller.

CY27H256-35ZC Technical Specifications

Parameter	Spezifikation
Speichergröße	256K x 8 bits (2 Mbit)
Zugriffszeit	35 ns
Betriebsspannung	5 V ??10%
Paket Typ	28-pin DIP
Betriebstemperaturbereich	0??C to +70??C
Datenspeicherung Spannung	2 V (minimum)
Standby Current	10 mA (typical)
Betriebsstrom	65 mA (typical)
Data Input/Output Type	TTL-kompatibel
Abmessungen der Verpackung	Standard 28-pin DIP footprint

CY27H256-35ZC Key Features

• Fast 35 ns access time: Enables rapid data access crucial for high-speed computing and buffering applications.
• 5 V ??10% operating voltage: Ensures compatibility with a wide range of legacy and current systems relying on standard TTL logic levels.
• Low standby and operating currents: Reduces power consumption, improving system efficiency and thermal management in embedded environments.
• Industrial temperature range (0??C to +70??C): Supports reliable operation in a variety of commercial and industrial conditions.
• Standard 28-pin DIP package: Facilitates straightforward PCB mounting and replacement in existing hardware designs.
• TTL compatible input/output: Provides seamless interface compatibility with common digital logic families.
• Data retention at reduced voltages: Maintains stored data integrity during power fluctuations or standby modes.

CY27H256-35ZC Advantages vs Typical Alternatives

This SRAM offers a competitive 35 ns access time combined with low power consumption, making it ideal for systems requiring both speed and energy efficiency. Compared to typical asynchronous SRAM alternatives, it provides a robust industrial temperature range and standard packaging that simplifies integration. Its TTL compatibility and stable data retention voltage enhance reliability and design flexibility in embedded and industrial applications.

Typische Anwendungen

• Embedded systems memory expansion: Provides fast, reliable storage for microprocessor-based designs requiring quick data access and cache memory capabilities.
• Cache memory in computing devices: Supports buffering and temporary data storage to improve system throughput and processing speed.
• Networking equipment: Used in routers and switches for rapid packet buffering and data handling.
• Industrial control systems: Offers stable, high-speed memory solutions for real-time data acquisition and control logic execution.

CY27H256-35ZC Brand Info

The CY27H256-35ZC is part of a well-established SRAM product line recognized for quality and performance in industrial-grade memory solutions. This device is manufactured by a reputable semiconductor producer specializing in integrated circuit technologies that meet rigorous industry standards. Designed to support demanding applications, this SRAM combines reliability, speed, and ease of integration, making it a preferred choice among engineers and system designers.

FAQ

What is the operating voltage range of the CY27H256-35ZC?

The device operates at a standard voltage of 5 V with a tolerance of ??10%. This voltage range aligns with TTL logic levels, ensuring compatibility with many existing industrial and embedded systems.

What packaging options are available for this SRAM?

The CY27H256-35ZC is supplied in a 28-pin Dual Inline Package (DIP