2N4449UB/TR Diode Transistor by ON Semiconductor, TO-92 Package – High Performance

2N4449UB/TR Overview

The 2N4449UB/TR is a high-performance NPN bipolar junction transistor designed for switching and amplification applications in industrial and electronic circuits. Offering a robust collector current rating and reliable gain characteristics, this transistor is well-suited for medium power applications requiring fast switching speeds and stable operation. The device is available in a standard TO-92 package, facilitating easy integration into a wide range of circuit board layouts. Engineers and sourcing specialists will appreciate its consistent electrical parameters, making it a dependable choice for signal processing and amplification tasks. For detailed specifications and purchasing options, visit IC-Hersteller.

2N4449UB/TR Key Features

• High Collector Current: Supports up to 600 mA, enabling use in moderate power control and switching circuits.
• Low Collector-Emitter Saturation Voltage: Ensures efficient switching with minimal power loss, improving overall circuit efficiency.
• Wide Frequency Response: Suitable for amplification and switching in audio, low RF, and signal processing applications.
• Standard TO-92 Package: Provides easy handling and compatibility with common PCB assembly processes.

2N4449UB/TR Technical Specifications

2N4449UB/TR Advantages vs Typical Alternatives

This transistor offers a compelling combination of high collector current and low saturation voltage, which enhances power efficiency compared to typical general-purpose transistors. Its stable gain and frequency response make it a reliable choice for medium power amplification and switching, providing better switching speed and thermal performance. The TO-92 package ensures straightforward integration into existing designs without requiring specialized mounting, giving it an edge in cost-sensitive and space-constrained applications.

Typische Anwendungen

• Signal amplification in audio and low-frequency circuits, offering reliable gain and linearity for clear sound reproduction and signal integrity.
• Switching applications in industrial control systems where moderate power handling and fast switching are required.
• General-purpose switching in consumer electronics, including relay driving and LED control circuits.
• Driver stage in sensor interfaces and small motor control circuits, benefiting from stable operation and moderate current capability.

2N4449UB/TR Brand Info

The 2N4449UB/TR is a trusted transistor product from a reputable semiconductor manufacturer, designed for high reliability and consistent performance in industrial electronics. This product reflects the brand??s commitment to quality and durability in discrete transistor components. It caters to engineers and procurement specialists who demand dependable devices for both prototype development and mass production. The transistor is manufactured under stringent quality controls, ensuring compliance with industry standards and extended operational life.

FAQ

What is the maximum collector current rating for this transistor?

The maximum collector current rating is 600 mA, allowing the transistor to handle moderate power loads in switching and amplification circuits without damage.

Can this device operate at high frequencies?

Yes, it has a typical transition frequency of 100 MHz, making it suitable for low RF and audio frequency applications where fast switching and signal amplification are required.

What package does this transistor come in?

The device is housed in a TO-92 package, which is a small, through-hole plastic package commonly used for discrete transistors, providing easy mounting and reliable mechanical stability.

What are the typical applications for this transistor?

Typical applications include signal amplification, switching in industrial control circuits, relay driving, LED control, and acting as a driver in sensor and motor control interfaces.

How does the 2N4449UB/TR compare to other general-purpose transistors?

It offers a higher collector current and lower saturation voltage than many general-purpose transistors, which improves efficiency and reliability in switching circuits, making it a preferred choice for medium power applications.