2N3735-Transistor by ON Semiconductor | NPN Power Transistor | TO-220 Package

  • This transistor amplifies electrical signals, enabling improved control in various electronic circuits.
  • It supports moderate current levels, ensuring efficient performance in power regulation tasks.
  • The compact package design helps save board space, allowing for more streamlined device layouts.
  • Ideal for switching applications in automotive or industrial systems, enhancing system responsiveness.
  • Manufactured to meet standard quality controls, providing consistent operation under typical conditions.
Mikrochip-Technologie-Logo
产品上方询盘

2N3735-Transistor Overview

The 2N3735 is an NPN bipolar junction transistor designed for medium power amplification and switching applications. With its robust collector current rating and moderate voltage handling capability, it is ideal for general-purpose industrial electronics and control circuits. The transistor??s reliable switching characteristics and stable gain make it suitable for use in amplifier stages and driver circuits. Its construction supports effective heat dissipation, ensuring dependable operation under varied load conditions. Engineers and sourcing specialists will find this device valuable for cost-effective, efficient signal control in diverse electronic systems. More technical details and sourcing options are available through the IC-Hersteller.

2N3735-Transistor Key Features

  • Hohe Kollektorstromkapazität: Supports up to 8A, enabling operation in medium power applications without excessive thermal stress.
  • Collector-emitter voltage rating: With a maximum voltage of 60V, it accommodates a wide range of switching and amplification tasks safely.
  • Moderate power dissipation: Allows dissipation up to 75W, enhancing reliability under continuous operation by managing heat effectively.
  • Gain bandwidth product: Offers stable current gain (hFE) characteristics, ensuring consistent amplification and switching performance.

2N3735-Transistor Technical Specifications

Parameter Wert Einheit
Kollektor-Emitter-Spannung (VCEO) 60 V
Kollektor-Basis-Spannung (VCBO) 80 V
Emitter-Basis-Spannung (VEBO) 5 V
Kollektorstrom (IC) 8 A
Verlustleistung (PD) 75 W
DC-Stromverstärkung (hFE) 20 – 70 (typisch)
Übergangsfrequenz (fT) ?? 5 MHz
Betriebssperrschichttemperatur (TJ) 150 ??C

2N3735-Transistor Advantages vs Typical Alternatives

This transistor delivers a strong balance of collector current capacity and voltage tolerance, outperforming typical small-signal transistors in power handling and thermal dissipation. Its stable gain and reliable switching make it preferable for industrial circuits requiring robust signal amplification or control. Compared to similar devices, it offers enhanced durability and consistent performance under continuous load, reducing failure rates and maintenance needs.

Typische Anwendungen

  • Power amplifier stages in audio and industrial signal processing circuits, where medium power and reliable gain are necessary for clear, distortion-free output.
  • Switching regulators and power control switches, facilitating efficient energy management in industrial automation and motor control.
  • Driver circuits for relays and solenoids, providing dependable current amplification to actuate electromechanical components.
  • General-purpose switching in industrial electronic systems, supporting robust operation in harsh environments with stable thermal characteristics.

2N3735-Transistor Brand Info

The 2N3735 transistor is a widely recognized industrial-grade semiconductor device produced by established manufacturers focusing on high-quality bipolar junction transistors. It is designed to meet stringent performance and reliability standards demanded by industrial and commercial electronics sectors. The product??s consistent manufacturing process ensures compatibility with existing circuit designs and ease of integration, making it a trusted choice among engineers and sourcing specialists worldwide.

FAQ

What is the maximum collector current rating of this transistor?

The transistor can handle a maximum collector current of 8 amperes, enabling it to manage medium power loads without overheating or performance degradation.

What voltage levels can this transistor safely operate at?

It supports a maximum collector-emitter voltage of 60 volts and a collector-base voltage of 80 volts, making it suitable for a variety of switching and amplification applications within these limits.

How does the power dissipation rating affect the transistor??s use?

With a power dissipation rating of 75 watts, the device can operate continuously under moderate thermal load conditions, reducing the risk of thermal failure in demanding industrial environments.

📩 Kontakt

产品中间询盘

Is the gain (hFE) consistent over the operating range?

The transistor exhibits a typical DC current gain ranging from 20 to 70, providing stable amplification characteristics suitable for medium power switching and signal amplification.

Kann dieser Transistor in Hochfrequenzanwendungen eingesetzt werden?

While the transition frequency is around 5 MHz, it is primarily designed for medium frequency and power applications rather than high-frequency RF circuits, ensuring optimal performance in industrial control and amplification tasks.

Anmeldung

, ,

Kosten und Zeit sparen

Schnelle weltweite Lieferung

Originalteile garantiert

Kompetente Unterstützung nach dem Kauf

Suchen Sie einen besseren Preis?