2N3716-Transistor NPN Amplifier Transistor in TO-18 Metal Can Package by ON Semiconductor

  • This transistor amplifies electrical signals efficiently, enabling precise control in various circuits.
  • Its maximum voltage rating supports stable operation under typical electronic load conditions.
  • The compact package type allows easy integration on crowded circuit boards, saving valuable space.
  • Ideal for switching applications in low-power devices, ensuring quick response and energy savings.
  • Manufactured to meet industry reliability standards, providing consistent performance over time.
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产品上方询盘

2N3716-Transistor Overview

The 2N3716 is an NPN silicon planar transistor designed for medium power and general-purpose amplification in electronic circuits. It features a maximum collector current of 200 mA and can operate at voltages up to 60 V, making it suitable for switching and linear applications. Its low noise and high gain characteristics provide reliable performance in amplifier stages and driver circuits. With its TO-18 metal can package, the device ensures efficient heat dissipation and mechanical robustness. This transistor is widely used in industrial and commercial electronics where dependable switching and amplification are required. For sourcing and detailed specifications, visit IC-Hersteller.

2N3716-Transistor Key Features

  • Medium power handling capability: Supports collector currents up to 200 mA, enabling effective control in moderate load applications.
  • Voltage tolerance: Maximum collector-emitter voltage of 60 V allows operation in a variety of voltage domains without risk of breakdown.
  • High current gain (hFE): Provides amplification factors typically ranging from 40 to 300, ensuring strong signal amplification and switching efficiency.
  • TO-18-Metalldosengehäuse: Enhances thermal conductivity and mechanical durability, critical for stable operation under industrial conditions.

2N3716-Transistor Technical Specifications

Parameter Wert Units
Kollektor-Emitter-Spannung (VCEO) 60 V
Kollektor-Basis-Spannung (VCBO) 75 V
Emitter-Basis-Spannung (VEBO) 5 V
Kollektorstrom (IC) 200 mA
Verlustleistung (Ptot) 800 mW
DC-Stromverstärkung (hFE) 40 to 300 ?C
Übergangsfrequenz (fT) 120 MHz
Sperrschichttemperatur (Tj) 200 ??C

2N3716-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of medium power capability and high current gain, providing superior switching speed and amplification compared to many general-purpose devices. Its TO-18 metal can package improves thermal management and reliability in demanding industrial environments. The wide voltage ratings and stable gain make it a preferred choice for applications where both performance and durability are critical, distinguishing it from lower power or plastic-encapsulated alternatives.

Typische Anwendungen

  • Signal amplification in audio and intermediate frequency stages where moderate power and low noise are essential for clear output.
  • Switching circuits in control panels and industrial automation systems requiring reliable transistor switching with fast response.
  • Driver stages for relay coils and small motors, leveraging its ability to handle currents up to 200 mA efficiently.
  • General-purpose linear amplification in analog circuits, including voltage regulation and sensor interface modules.

2N3716-Transistor Brand Info

The 2N3716 transistor is a well-established silicon planar NPN transistor commonly offered by multiple semiconductor manufacturers under standardized specifications. Its availability in the TO-18 metal can package underscores its industrial-grade reliability. This device is widely recognized for its consistent performance in medium-power amplification and switching applications across various electronic designs. Trusted by engineers globally, it remains a staple component in many legacy and new industrial electronics systems.

FAQ

What is the maximum collector current rating of this transistor?

The transistor supports a maximum collector current of 200 mA, making it suitable for medium power applications such as driver circuits and small motor controls.

Can this transistor handle high voltage applications?

Yes, it can withstand a collector-emitter voltage of up to 60 V and a collector-base voltage up to 75 V, allowing it to operate reliably in moderate voltage environments.

What package does this transistor come in and why is it important?

It is housed in a TO-18 metal can package, which provides excellent thermal dissipation and mechanical stability, essential for industrial and high-reliability applications.

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产品中间询盘

What is the typical current gain range for this transistor?

The DC current gain (hFE) typically ranges between 40 and 300, enabling effective amplification and switching performance in various circuit designs.

Ist dieser Transistor für Hochfrequenzanwendungen geeignet?

With a transition frequency of approximately 120 MHz, it is capable of handling moderately high-frequency signals, making it useful for intermediate frequency amplifier stages and switching circuits.

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