2N3637UB-Transistor by ON Semiconductor ?C NPN Amplifier Transistor, TO-92 Package

2N3637UB-Transistor Overview

The 2N3637UB is a high-performance NPN bipolar junction transistor designed for general-purpose amplification and switching applications. It offers reliable operation at moderate voltage and current levels, making it suitable for a wide range of industrial and electronic circuit designs. This transistor exhibits low noise characteristics and stable gain, ensuring consistent performance in signal processing tasks. Its robust construction supports dependable operation across varying environmental conditions. Engineers and sourcing specialists can trust this component for efficient integration into power management, amplification, and control systems. For detailed product availability and support, visit IC-Hersteller.

2N3637UB-Transistor Key Features

• Medium power handling: Supports collector current up to 500mA, enabling effective switching and amplification in moderate load circuits.
• Voltage rating: With a collector-emitter voltage of 40V, it ensures safe operation within typical industrial voltage ranges.
• Low noise figure: Minimizes signal distortion, critical for high-fidelity analog applications and sensitive measurement systems.
• High current gain (hFE): Delivers gain factors between 40 and 300, allowing flexible biasing and amplification options.
• Robust thermal performance: Maximum junction temperature up to 150??C supports reliable operation under elevated heat conditions.
• Standard TO-39 metal can package: Facilitates easy mounting and optimal heat dissipation in diverse assembly environments.
• Complementary device compatibility: Simplifies push-pull and amplifier circuit designs by pairing with matched PNP types.

2N3637UB-Transistor Technical Specifications

Parameter	Symbol	Wert	Einheit
Kollektor-Emitter-Spannung	VCEO	40	V
Kollektor-Basis-Spannung	VCBO	60	V
Emitter-Grundspannung	VEBO	5	V
Collector Current (Continuous)	IC	500	mA
Verlustleistung	PTOT	625	mW
DC-Stromverstärkung (hFE)	hFE	40 to 300	?C
Häufigkeit der Übergänge	fT	100	MHz
Sperrschichttemperatur	TJ	150	??C
Paket Typ	?C	TO-39	?C

2N3637UB-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of voltage and current ratings that exceed many comparable devices, providing greater design flexibility. Its low noise and high gain characteristics improve signal integrity, making it preferable for sensitive analog circuits. Additionally, the rugged TO-39 package enhances thermal management and mechanical durability, ensuring longer operational life and reliability in industrial environments.

Typische Anwendungen

• Audio amplification circuits requiring low noise and stable gain for clear signal reproduction in consumer and industrial audio devices.
• Switching regulators where efficient power control and rapid switching capabilities are essential for voltage regulation.
• General-purpose switching in automation and control systems, leveraging its moderate power handling and robust voltage ratings.
• Signal processing modules that benefit from its high transition frequency and low distortion characteristics.

2N3637UB-Transistor Brand Info

The 2N3637UB transistor is manufactured by a leading semiconductor supplier known for quality and reliability in discrete components. This product line has been optimized for industrial-grade performance, aligning with stringent manufacturing standards to meet the demands of professional electronics engineers and sourcing specialists. Designed for broad compatibility and ease of integration, it supports a variety of circuit designs, ensuring consistent quality and availability through established distribution channels.

FAQ

What is the maximum collector current rating for this transistor?

The maximum continuous collector current rating is 500mA. This allows the device to handle moderate power loads suitable for switching and amplification tasks in many industrial applications.

Which package type does this transistor come in?

The transistor is supplied in a TO-39 metal can package. This package type provides excellent thermal dissipation and mechanical stability, making it suitable for various mounting options in industrial circuits.

What voltage levels can the transistor safely operate under?

The device supports a collector-emitter voltage of up to 40 volts and a collector-base voltage of up to 60 volts. These ratings enable reliable performance within typical low to medium voltage electronic systems.

How does the transistor??s gain affect its application?

With a DC current gain ranging from 40 to 300, the transistor offers flexibility in circuit biasing and amplification levels. High gain contributes to efficient signal amplification, essential for low-level signal processing.

Ist dieser Transistor für Hochfrequenzanwendungen geeignet?

Yes, the transistor has a transition frequency of approximately 100 MHz, making it capable of operating effectively in many moderate high-frequency signal processing and switching circuits.